AP95N25W
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Lower On-resistance
▼ High Speed Switching
BVDSS
250V
RDS(ON)
55mΩ
ID
G
50A
S
Description
AP95N25 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
G
D
TO-3P
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage
±30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
50
A
200
A
50
A
200
A
1
IDM
Pulsed Drain Current
IDR
Body-Drain Diode Reverse Drain Current
1
IDR(PULSE)
Body-Drain Diode Reverse Drain Peak Current
PD@TC=25℃
Total Power Dissipation
150
W
Linear Derating Factor
1.2
W/℃
30
A
3
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
0.833
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
40
℃/W
Data and specifications subject to change without notice
200329072-1/4
AP95N25W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
250
-
-
V
VGS=10V, ID=25A
-
-
55
mΩ
2.5
-
4
V
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=25A
-
25
-
S
IDSS
Drain-Source Leakage Current
VDS=250V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS= ±30V, VDS=0V
-
-
±0.1
uA
ID=50A
-
168
270
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=200V
-
36
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
68
-
nC
VDS=125V
-
50
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=25A
-
92
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
250
-
ns
tf
Fall Time
RD=5Ω
-
105
-
ns
Ciss
Input Capacitance
VGS=0V
-
8370 13400
pF
Coss
Output Capacitance
VDS=15V
-
1505
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Min.
Typ.
IS=50A, VGS=0V
-
-
1.5
V
IS=50A, VGS=0V
-
320
-
ns
dI/dt=100A/µs
-
4.7
-
µC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.PW ≦ 10us, duty cycle ≦ 1%
2.Pulse test
3.STch = 25℃，Tch ≦ 150℃
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP95N25W
80
150
10V
8.0V
7.0V
T C = 25 C
ID , Drain Current (A)
120
6.0V
90
10V
8.0V
7.0V
6.0V
o
T C = 150 C
ID , Drain Current (A)
o
60
60
40
V G = 5.0 V
20
30
V G = 5.0 V
0
0
0
4
8
12
0
16
2
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
56
2.8
T C =25 o C
I D =25A
V G =10V
2.3
I D =25A
I D =50A
Normalized RDS(ON)
RDS(ON) (mΩ)
52
48
1.8
1.3
44
0.8
0.3
40
0
4
8
12
16
-50
20
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
50
40
Normalized VGS(th) (V)
IS(A)
1.2
30
T j =25 o C
T j =150 o C
20
0.8
0.4
10
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP95N25W
f=1.0MHz
16
10000
I D = 50 A
12
1000
C oss
V DS = 120 V
V DS = 160 V
V DS = 200 V
8
C (pF)
VGS , Gate to Source Voltage (V)
C iss
100
4
10
0
1
C rss
0
40
80
120
160
200
1
240
6
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
16
21
26
31
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
100
100us
ID (A)
11
V DS ,Drain-to-Source Voltage (V)
10
1ms
10ms
1
100ms
1s
DC
o
T c =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
VG
V DS =10V
ID , Drain Current (A)
QG
10V
40
T j =150 o C
T j =25 o C
QGS
QGD
20
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4