AO4916, AO4916L N-Channel Enhancement Mode Field Effect Transistor with Schcttky Diode General Description The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. AO4916L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D2 D2 G1 S1/A 1 2 3 4 D1 K G2 D1/S2/K D1/S2/K D1/S2/K 8 7 6 5 A G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Pulsed Drain Current A TA=70°C B TA=25°C Continuous Forward Current A TA=70°C B S2 MOSFET TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Thermal Characteristics Schottky Steady-State Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Steady-State TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V ±20 8.5 V 6.6 A 40 IF PD Schottky 30 IFM TA=25°C 1/7 ID IDM VKA Schottky reverse voltage Pulsed Forward Current G2 S1 SOIC-8 Continuous Drain Current D2 30 3 V 2 A 2 40 2 1.28 1.28 -55 to 150 -55 to 150 °C Typ Max Units 48 62.5 74 35 110 40 47.5 62.5 71 32 110 40 W °C/W °C/W www.freescale.net.cn AO4916, AO4916L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 30 VDS=24V, VGS=0V 0.005 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 40 VGS=10V, ID=8.5A TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=8.5A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 1 100 nA 3 V 14 17 20 25 21 27 mΩ 1 V 3 A 1250 pF A 23 1040 VGS=0V, VDS=15V, f=1MHz 180 VGS=10V, VDS=15V, ID=8.5A 0.35 mΩ S pF 110 VGS=0V, VDS=0V, f=1MHz µA 1.8 0.76 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Units 5 VGS(th) Static Drain-Source On-Resistance Max V TJ=55°C IGSS RDS(ON) Typ pF 0.7 0.85 Ω 19.2 24 nC 9.36 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.2 tD(on) Turn-On DelayTime 5.2 7.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time 2.6 nC nC ns VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 4.4 6.5 ns 17.3 25 ns 3.3 5 ns IF=8.5A, dI/dt=100A/µs 16.7 21 Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A 9.3 11 ns nC V Irm CT Maximum reverse leakage current Junction Capacitance 0.45 0.5 VR=30V VR=30V, TJ=125°C 0.007 0.05 3.2 10 VR=30V, TJ=150°C 12 37 20 VR=15V mA pF 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/7 www.freescale.net.cn AO4916, AO4916L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 4V 10V 25 20 3.5V 12 ID(A) ID (A) VDS=5V 16 4.5V 15 125°C 8 10 13.4 VGS=3V 5 22 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 16 26 0.763 2.5 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 26 Normalized On-Resistance 1.6 24 VGS=4.5V 22 RDS(ON) (mΩ) 25°C 4 20 18 16 VGS=10V 14 12 10 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 1.0E+00 ID=8.5A 1.0E-01 30 IS (A) RDS(ON) (mΩ) 40 125°C 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/7 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4916, AO4916L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 0 4 100.0 8 12 16 20 0 22 26 5 100µs 1ms 10.0 0.1s 1s TJ(Max)=150°C TA=25°C DC 30 30 20 0 0.001 0.1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 25 10 10s 1 20 TJ(Max)=150°C TA=25°C 40 10µs 10ms 0.1 15 0.76 50 RDS(ON) limited 1.0 10 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) ID (Amps) 16 Crss 0 Qg (nC) Figure 7: Gate-Charge Characteristics ZθJA Normalized Transient Thermal Resistance 13.4 250 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/7 www.freescale.net.cn Document No. Version Title PD-00071 rev C AO4916 Marking Description SO-8 PACKAGE MARKING DESCRIPTION Standard product NOTE: LOGO 4916 F&A Y W LT Green product - AOS LOGO - PART NUMBER CODE. - FOUNDRY AND ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE PART NO. DESCRIPTION AO4916 AO4916L 5/7 Standard product Green product CODE 4916 4916 www.freescale.net.cn 6/7 www.freescale.net.cn SO-8 Tape and Reel Data SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation 7/7 www.freescale.net.cn