TYSEMI 2SB1443

Product specification
2SB1443
Features
Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA.
Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-6
V
IC
-2
A
ICP *1
-5
A
W
Collector current
Collector dissipation
PC*2
1
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1 Single pulse Pw=10ms.
*2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltae
VCBO
IC= -50ìA
-50
Collector-emitter breakdown voltage
VCEO
IC= -1mA
-50
V
Emitter-base breakdown voltage
VEBO
IE= -50ìA
-6
V
Collector cutoff current
IcBO
VCB= -50V
Emitter cutoff current
IEBO
VEB= -5V
DC current gain
hFE
VCE=-2V, IC= -0.5A
Collector-emitter saturation voltage
VCE(sat) IC/IB= -1A/ -50mA
Output capacitance
Cob
Transition frequency
fT
http://www.twtysemi.com
V
120
-0.1
A
-0.1
A
270
-0.15 -0.35
V
VCB= -10V, IE=0A, f=1MHz
36
pF
VCE= -2V, IE=0.5A, f=100MHz
200
MHz
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4008-318-123
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