ETC 2SC4627B

Transistor
2SC4627
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
0.2+0.1
–0.05
0.75±0.15
5˚
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
15
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
–55 ~ +125
˚C
■ Electrical Characteristics
0 to 0.1
■ Absolute Maximum Ratings
0.2±0.1
0.8±0.1
1.6±0.15
2
(0.4)
1
(0.5) (0.5)
1.0±0.1
1.6±0.1
(0.3)
●
Optimum for RF amplification of FM/AM radios.
High transition frequency fT.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1:Base
2:Emitter
3:Collector
0.45±0.1
●
1˚
■ Features
●
0.15+0.1
–0.05
3
EIAJ : SC-89
SSMini3-G1 Package
Marking symbol : U
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
3
V
Forward current transfer ratio
hFE
*
VCB = 6V, IE = –1mA
40
Base to emitter voltage
VBE
VCB = 6V, IE = –1mA
260
0.72
Transition frequency
fT
VCB = 6V, IE = –1mA, f = 200MHz
Common emitter reverse transfer capacitance
Cre
VCB = 6V, IE = –1mA, f = 10.7MHz
Power gain
PG
VCB = 6V, IE = –1mA, f = 100MHz
24
dB
Noise figure
NF
VCB = 6V, IE = –1mA, f = 100MHz
3.3
dB
*h
FE
450
V
650
0.8
MHz
1
pF
Rank classification
Rank
B
C
D
hFE
40 ~ 110
65 ~ 160
100 ~ 260
Marking Symbol
UB
UC
UD
475
2SC4627
Transistor
PC — Ta
IC — VCE
12
Ta=25˚C
10
100
75
50
25
80µA
8
60µA
6
40µA
4
20µA
80 100 120 140 160
6
Collector to emitter saturation voltage VCE(sat) (V)
VCE=6V
25˚C
–25˚C
20
15
10
5
0
0
0.4
0.8
1.2
12
1.6
2.0
30
10
3
1
0.3
25˚C
0.1
0.01
0.1
Ta=75˚C
–25˚C
0.03
0.3
1
3
1000
800
600
400
200
–10
–30
Emitter current IE (mA)
–100
Reverse transfer impedance Zrb (Ω)
VCB=6V
Ta=25˚C
10
30
300
240
Ta=75˚C
180
25˚C
–25˚C
120
60
0
0.1
100
0.3
60
40
20
– 0.3
–1
3
10
30
100
Cre — VCE
80
0
– 0.1
1
Collector current IC (mA)
VCB=6V
f=2MHz
Ta=25˚C
100
180
VCE=6V
Zrb — IE
120
120
360
IC/IB=10
fT — IE
–3
60
Base current IB (µA)
Collector current IC (mA)
1200
–1
0
hFE — IC
100
Base to emitter voltage VBE (V)
0
– 0.1 – 0.3
18
VCE(sat) — IC
30
Ta=75˚C
4
Collector to emitter voltage VCE (V)
IC — VBE
25
6
0
0
Forward current transfer ratio hFE
60
–3
Emitter current IE (mA)
–10
Common emitter reverse transfer capacitance Cre (pF)
40
8
2
0
20
Ambient temperature Ta (˚C)
Collector current IC (mA)
10
2
0
476
VCE=6V
Ta=25˚C
IB=100µA
Collector current IC (mA)
125
0
Transition frequency fT (MHz)
IC — I B
12
Collector current IC (mA)
Collector power dissipation PC (mW)
150
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
2SC4627
Transistor
Cob — VCB
PG — IE
0.8
0.6
0.4
12
f=100MHz
Rg=50Ω
Ta=25˚C
35
30
VCE=10V
25
6V
20
15
10
8
6
4
0.2
VCE=6V, 10V
2
5
0
5
10
15
20
25
0
– 0.1 – 0.3
30
Collector to base voltage VCB (V)
–1
–3
–10
–30
Emitter current IE (mA)
bie — gie
Reverse transfer susceptance bre (mS)
–4mA
–7mA
16
100
–2mA
14
100
12
58
10
IE=– 0.5mA
–1mA
8
6
58
25
4
25
2
f=10.7MHz
0
0
3
6
9
12
15
Input conductance gie (mS)
0
10.7
25
yre=gre+jbre
VCE=10V
–1
–4mA
–2
–1mA
58
IE=–7mA
–3
–4
100
–5
–10
–30
–100
10.7
58
– 0.4mA
–1mA
100
–20
150
–2mA
–40
150
–4mA
100
58
–60
f=150MHz
IE=–7mA
100
–80
–100
f=150MHz
–6
– 0.5
–3
bfe — gfe
0
150
yie=gie+jbie
VCE=10V
–1
Emitter current IE (mA)
bre — gre
20
18
0
– 0.1 – 0.3
–100
Forward transfer susceptance bfe (mS)
0
Input susceptance bie (mS)
f=100MHz
Rg=50kΩ
Ta=25˚C
10
Noise figure NF (dB)
IE=0
f=1MHz
Ta=25˚C
1.0
NF — IE
40
Power gain PG (dB)
Collector output capacitance Cob (pF)
1.2
yfe=gfe+jbfe
VCE=10V
–120
– 0.4
– 0.3
– 0.2
– 0.1
0
Reverse transfer conductance gre (mS)
0
20
40
60
80
Forward transfer conductance
100
gfe (mS)
boe — goe
IE=– 0.5mA
–1mA
Output susceptance boe (mS)
1.2
1.0
150
–2mA
–4mA
100
0.8
–7mA
0.6
58
0.4
25
0.2
yoe=goe+jboe
VCE=10V
f=10.7MHz
0
0
0.1
0.2
0.3
0.4
0.5
Output conductance goe (mS)
477
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2001 MAR