Power Transistors 2SB1317 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1975 (10.0) (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO −180 V Collector to emitter voltage VCEO −180 V Emitter to base voltage VEBO −5 V Peak collector current ICP −25 A Collector current IC −15 A PC 150 W TC = 25°C Ta = 25°C 2.7±0.3 3.0±0.3 5.45±0.3 Symbol Collector power dissipation (1.5) 2.0±0.3 ■ Absolute Maximum Ratings TC = 25°C Parameter (2.0) (1.5) • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation (ASO) • High transition frequency fT • Optimum for the output stage of a Hi-Fi audio amplifier 5.0±0.3 (3.0) 20.0±0.5 (2.5) Solder Dip ■ Features 26.0±0.5 20.0±0.5 1 2 1 : Base 2 : Collector 3 : Emitter TOP-3L Package 3 3.5 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = −180 V, IE = 0 −50 µA Emitter cutoff current IEBO VEB = −3 V, IC = 0 −50 µA hFE1 Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency VCE = −5 V, IC = −20 mA 20 hFE2 * VCE = −5 V, IC = −1 A 60 hFE3 VCE = −5 V, IC = −8 A 20 VBE VCE = −5 V, IC = −8 A VCE(sat) IC = −10 A, IB = −1 A fT Collector output capacitance Cob 200 −1.8 −2.5 V V VCE = −5 V, IC = − 0.5 A, f = 1 MHz 20 MHz VCB = −10 V, IE = 0, f = 1 MHz 450 pF Note) *: Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 1 2SB1317 Power Transistors PC T a IC VCE 150 (1) 100 50 –24 TC=25˚C IB=–1000mA –800mA –700mA –600mA –500mA –400mA –20 –16 –300mA –12 –200mA –150mA –8 –100mA 0 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) –2 –4 25˚C TC=100˚C –25˚C –1 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 –10 –8 –30 1000 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 –3 –6 –10 –12 300 100 –25˚C 30 10 3 1 – 0.1 – 0.3 –100 25˚C TC=100˚C –1 –3 –10 –30 –100 Collector current IC (A) Cob VCB Area of safe operation (ASO) –100 10000 IE=0 f=1MHz TC=25˚C –30 ICP –10 IC Non repetitive pulse TC=25˚C Collector current IC (A) t=10ms 1000 300 100ms –3 DC –1 – 0.3 100 – 0.1 30 – 0.03 –3 –10 –30 –100 Collector to base voltage VCB (V) – 0.01 –1 –3 –10 –30 –1 –2 –3 –4 Base to emitter voltage VBE (V) fT I C VCE=–5V Collector current IC (A) 3000 0 hFE IC – 0.3 Collector output capacitance Cob (pF) –6 Collector to emitter voltage VCE (V) VCE(sat) IC –10 10 –1 100˚C –12 0 0 1000 Transition frequency fT (MHz) 20 25˚C TC=–25˚C (3) (2) 0 –18 –50mA –4 0 2 VCE=–5V Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) IC VBE –24 Collector current IC (A) Collector power dissipation PC (W) 200 –100 –300 –1000 Collector to emitter voltage VCE (V) VCE=–10V f=1MHz TC=25˚C 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) –10 Power Transistors 2SB1317 Rth(t) t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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