Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 Unit: mm 3.0±0.2 4.0±0.2 ■ Features (Ta=25˚C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Peak collector current ICP –60 mA Collector current IC –30 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Symbol 3 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package max Unit VCB = –10V, IE = 0 – 0.1 µA ICEO VCE = –20V, IB = 0 –100 µA IEBO VEB = –5V, IC = 0 –10 µA ICBO Emitter cutoff current 2 (Ta=25˚C) Parameter Collector cutoff current 1 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 ● Allowing supply with the radial taping. High transition frequency fT. Optimum for high-density mounting. 0.7±0.1 ● +0.2 0.45–0.1 ● Conditions min typ Forward current transfer ratio hFE * VCE = –10V, IC = –1mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA Base to emitter voltage VBE VCE = –10V, IC = –1mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCB = –10V, IE = 1mA, f = 2MHz 22 50 Ω Common emitter reverse transfer capacitanse Cre VCE = –10V, IC = –1mA, f = 10.7MHz 1.2 2.0 pF *h FE 70 220 – 0.1 150 V – 0.7 V 300 MHz Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 1 Transistor 2SA1323 PC — Ta IC — VCE –60 Ta=25˚C 450 300 250 200 150 –200µA –16 –150µA –12 –100µA –8 –50µA –4 25˚C Ta=75˚C –25˚C –30 –20 –10 0 40 60 80 100 120 140 160 0 0 –2 –4 –30 –3 Ta=75˚C –1 25˚C –25˚C – 0.3 – 0.1 – 0.03 –30 25˚C –25˚C –60 –40 –20 1 –10 –30 –100 Collector to base voltage VCB (V) –1 –3 –10 –30 300 250 200 150 100 0 0.1 –100 0.3 6 10 30 100 PG — IC 4 3 2 1 0 –1 3 24 IC=–1mA f=10.7MHz Ta=25˚C 5 1 Emitter current IE (mA) VCE=–10V f=100MHz Ta=25˚C 20 Power gain PG (dB) Common emitter reverse transfer capacitance Cre (pF) 2 –2.0 Ta=25˚C VCB=–10V Cre — VCE 3 –1.6 50 Cob — VCB 4 –1.2 350 Collector current IC (mA) f=1MHz IE=0 Ta=25˚C – 0.8 fT — IE Ta=75˚C 0 – 0.1 – 0.3 –100 5 –3 – 0.4 Base to emitter voltage VBE (V) 400 –80 Collector current IC (mA) 0 –1 0 VCE=–10V –100 –10 –10 –12 –120 Forward current transfer ratio hFE IC/IB=10 –3 –10 hFE — IC –100 –1 –8 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.01 – 0.1 – 0.3 –6 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –40 100 0 Collector output capacitance Cob (pF) –50 Collector current IC (mA) 350 VCE=–10V IB=–250µA –20 400 50 2 IC — VBE –24 Collector current IC (mA) Collector power dissipation PC (mW) 500 16 12 8 4 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector current IC (mA) –100 Transistor 2SA1323 NF — IE 6 VCB=–10V f=100MHz Ta=25˚C Noise figure NF (dB) 5 4 3 2 1 0 – 0.1 – 0.3 –1 –3 –10 Emitter current IE (mA) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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