Transistor 2SC4809 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 1.6±0.15 Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics +0.1 0.5 0.5 1.6±0.1 3 2 +0.1 0.15–0.05 (Ta=25˚C) Parameter 1 0 to 0.1 ■ Absolute Maximum Ratings 0.4 0.45±0.1 0.3 ● High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.0±0.1 ● 0.75±0.15 ● 0.8±0.1 0.2–0.05 ■ Features 0.4 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : 1S (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 1 µA Collector cutoff current ICBO VCB = 10V, IE = 0 Collector to emitter voltage VCEO IC = 2mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 3 Forward current transfer ratio hFE* VCE = 4V, IC = 5mA 75 Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 4mA Transition frequency fT VCB = 4V, IE = –5mA, f = 200MHz Collector output capacitance Cob VCB = 4V, IE = 0, f = 1MHz 1.4 pF Base time constant rbb' · CC VCB = 4V, IE = –5mA, f = 31.9MHz 11 PS Common emitter reverse transfer capacitance Crb VCB = 4V, IE = 0, f = 1MHz 0.45 pF VCE = 4V, IC = 100µA hFE ratio *h FE VCE = 4V, IC = 5mA 10 1.4 0.75 V V 400 1.9 0.5 V 2.7 GHz 1.6 Rank classification Rank P Q R hFE 75 ~ 130 110 ~ 220 200 ~ 400 Marking Symbol 1SP 1SQ 1SR 1 2SC4809 Transistor PC — Ta IC — VCE 60 50 100 75 50 60 50 IB=500µA 400µA 40 300µA 30 200µA 20 100µA 25 Ta=75˚C –25˚C 40 30 20 10 10 0 40 60 80 100 120 140 160 0 0 2 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 1 3 10 30 100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 0 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) fT — I E 4.0 300 Ta=75˚C 240 25˚C 180 –25˚C 120 60 VCB=4V Ta=25˚C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 1.6 1.4 12 VCE=4V Forward current transfer ratio hFE 30 0.3 10 360 IC/IB=10 0.01 0.1 8 hFE — IC 100 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 Transition frequency fT (GHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 125 0 Collector output capacitance Cob (pF) VCE=4V 25˚C Ta=25˚C 70 0 2 IC — VBE 80 Collector current IC (mA) Collector power dissipation PC (mW) 150 100 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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