Transistor 2SC2377 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Symbol Emitter cutoff current 3 2.5 1:Base 2:Collector 3:Emitter 2.5 EIAJ:SC–71 M Type Mold Package max Unit VCB = 10V, IE = 0 Conditions 100 nA ICEO VCE = 20V, IB = 0 10 µA IEBO VEB = 3V, IC = 0 1 µA Forward current transfer ratio hFE VCB = 6V, IE = –1mA Base to emitter voltage VBE VCB = 6V, IE = –1mA Transition frequency fT VCB = 6V, IE = –1mA, f = 100MHz Noise figure NF VCB = 6V, IE = –1mA Power gain PG VCB = 6V, IE = –1mA Common emitter reverse transfer capacitance Cre VCE = 6V, IC = 1mA FE 1 ICBO * *h 2 (Ta=25˚C) Parameter Collector cutoff current 0.45±0.05 (Ta=25˚C) 1.25±0.05 0.55±0.1 ■ Absolute Maximum Ratings min typ 65 260 720 450 650 3.3 20 mV MHz 5 24 0.8 dB dB 1 pF Rank classification Rank C D hFE 65 ~ 160 100 ~ 260 1 2SC2377 Transistor PC — Ta IC — VCE 12 Ta=25˚C 450 300 250 200 150 100 80µA 8 60µA 6 40µA 4 20µA 2 6V 8 6 4 2 0 60 80 100 120 140 160 0 0 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=6V 25˚C –25˚C 20 15 10 5 0 0 0.4 0.8 1.2 1.6 2.0 30 10 3 1 0.3 –25˚C 0.03 0.01 0.1 Ta=75˚C 25˚C 0.1 0.3 1 3 fT — IE 10 30 Reverse transfer impedance Zrb (Ω) VCB=10V 800 6V 600 400 200 –3 –10 300 240 Ta=75˚C 180 25˚C –25˚C 120 60 0 0.1 0.3 –30 Emitter current IE (mA) –100 100 80 60 40 VCE=6V 10V 0 – 0.1 – 0.3 –1 3 10 30 100 Cre — VCE f=2MHz Ta=25˚C 20 1 Collector current IC (mA) Zrb — IE 1000 180 VCE=6V 100 120 Ta=25˚C 120 360 IC/IB=10 Collector current IC (mA) 1200 –1 60 Base current IB (µA) hFE — IC 100 Base to emitter voltage VBE (V) 0 – 0.1 – 0.3 0 VCE(sat) — IC 30 Ta=75˚C 18 Collector to emitter voltage VCE (V) IC — VBE 25 12 Forward current transfer ratio hFE 40 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 20 Ambient temperature Ta (˚C) Collector current IC (mA) VCE=10V 50 0 Transition frequency fT (MHz) 10 Collector current IC (mA) 350 Ta=25˚C IB=100µA 10 400 0 2 IC — I B 12 Collector current IC (mA) Collector power dissipation PC (mW) 500 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 2SC2377 Transistor Cob — VCB PG — IE 0.8 0.6 0.4 12 f=100MHz Rg=50Ω Ta=25˚C 35 30 VCE=10V 25 6V 20 15 10 8 6 4 0.2 VCE=6V, 10V 2 5 0 5 10 15 20 25 0 – 0.1 – 0.3 30 Collector to base voltage VCB (V) Reverse transfer susceptance bre (mS) –7mA 100 –2mA 14 100 12 58 10 IE=– 0.5mA –1mA 8 6 58 25 4 25 2 f=10.7MHz 0 0 3 6 9 –30 0 – 0.1 – 0.3 –100 –1 12 15 Input conductance gie (mS) 0 10.7 25 yre=gre+jbre VCE=10V –1 –1mA –4mA IE=–7mA –2 58 –3 100 –4 –5 –6 – 0.5 –3 –10 –30 –100 Emitter current IE (mA) bfe — gfe 0 –4mA 16 –10 bre — gre 150 yie=gie+jbie VCE=10V 18 –3 Emitter current IE (mA) bie — gie 20 –1 Forward transfer susceptance bfe (mS) 0 Input susceptance bie (mS) f=100MHz Rg=50kΩ Ta=25˚C 10 Noise figure NF (dB) IE=0 f=1MHz Ta=25˚C 1.0 NF — IE 40 Power gain PG (dB) Collector output capacitance Cob (pF) 1.2 10.7 – 0.4mA –1mA 25 58 100 –20 150 –2mA –40 –4mA 150 100 58 f=150MHz –60 IE=–7mA 100 –80 –100 f=150MHz – 0.4 – 0.3 – 0.2 – 0.1 yfe=gfe+jbfe VCE=10V –120 0 Reverse transfer conductance gre (mS) 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) boe — goe IE=– 0.5mA –1mA Output susceptance boe (mS) 1.2 1.0 150 –2mA –4mA 100 0.8 –7mA 0.6 58 0.4 25 0.2 yoe=goe+jboe VCE=10V f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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