ETC 2SA1254B

Transistor
2SA1254
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC2206
Unit: mm
6.9±0.1
1.0
0.85
(Ta=25˚C)
0.55±0.1
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Collector to emitter voltage
VCEO
–20
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–60
mA
Collector current
IC
–30
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
Symbol
2.5
1:Base
2:Collector
3:Emitter
1
2.5
EIAJ:SC–71
M Type Mold Package
max
Unit
VCB = –10V, IE = 0
– 0.1
µA
ICEO
VCE = –20V, IB = 0
–100
µA
IEBO
VEB = –5V, IC = 0
–10
µA
ICBO
Emitter cutoff current
2
(Ta=25˚C)
Parameter
Collector cutoff current
3
0.45±0.05
1.25±0.05
■ Absolute Maximum Ratings
4.5±0.1
2.4±0.2 2.0±0.2 3.5±0.1
7
0.4
0.
●
1.0
R
●
High transition frequency fT.
Low collector to emitter saturation voltage VCE(sat).
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0±0.1
●
2.5±0.1
1.5 R0.9
R0.9
4.1±0.2
1.5
■ Features
*
Conditions
min
typ
Forward current transfer ratio
hFE
VCE = –10V, IC = –1mA
70
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
150
Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage
VBE
Noise figure
NF
VCB = –10V, IE = 1mA, f = 5MHz
2.8
4.0
dB
Reverse transfer impedance
Zrb
VCB = –10V, IE = 1mA, f = 2MHz
22
50
Ω
Common emitter reverse transfer capacitance
Cre
VCE = –10V, IC = –1mA, f = 10.7MHz
1.2
2.0
pF
*h
FE
220
300
MHz
IC = –10mA, IB = –1mA
– 0.1
V
VCE = –10V, IC = –1mA
– 0.7
V
Rank classification
Rank
B
C
hFE
70 ~ 140
110 ~ 220
1
2SA1254
Transistor
PC — Ta
IC — VCE
–25
400
350
300
250
200
150
100
IB=–250µA
–20
–200µA
–15
–150µA
–100µA
–30
–10
–3
–1
Ta=75˚C
25˚C
– 0.1
–50µA
–25˚C
– 0.03
50
0
40
60
80 100 120 140 160
0
–2
–4
–6
Ta=75˚C
25˚C
–25˚C
–60
–40
–20
0
– 0.1 – 0.3
–1
–3
–10
–30
Collector output capacitance Cob (pF)
–100
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
– 0.1 – 0.3
–100
Collector current IC (mA)
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
fT — IE
24
20
400
300
200
100
1
3
IC=–1mA
f=10.7MHz
Ta=25˚C
4
3
2
1
0
–1
–3
10
30
Emitter current IE (mA)
100
–10
–30
–100
NF — IE
VCB=–10V
f=100MHz
Ta=25˚C
4
16
12
8
3
2
1
4
0.3
–100
5
Noise figure NF (dB)
Power gain PG (dB)
500
–30
Collector to emitter voltage VCE (V)
VCE=–10V
f=100MHz
Ta=25˚C
VCB=–10V
Ta=25˚C
–10
5
P G — IC
600
–3
Cre — VCE
6
VCE=–10V
–1
Collector current IC (mA)
Cob — VCB
–120
–80
– 0.01
– 0.1 – 0.3
–10
Collector to emitter voltage VCE (V)
hFE — IC
0
0.1
–8
Common emitter reverse transfer capacitance Cre (pF)
20
Ambient temperature Ta (˚C)
Forward current transfer ratio hFE
IC/IB=10
– 0.3
–10
–5
0
Transition frequency fT (MHz)
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
450
0
2
VCE(sat) — IC
–100
–30
Collector current IC (mA)
Collector power dissipation PC (mW)
500
0
– 0.1 – 0.3
–1
–3
–10
–30
Collector current IC (mA)
–100
0
0.1
0.3
1
3
Emitter current IE (mA)
10
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2001 MAR