Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0±0.1 ● 0.4 0.2–0.05 ■ Features Symbol Ratings Unit VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current IC –30 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics Symbol Emitter cutoff current 1:Base 2:Emitter 3:Collector +0.1 0.2±0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : E (Ta=25˚C) Parameter Collector cutoff current 0 to 0.1 Parameter Collector to base voltage 0.15–0.05 (Ta=25˚C) 0.75±0.15 ■ Absolute Maximum Ratings 0.45±0.1 0.3 2 Conditions min typ max ICBO VCB = –10V, IE = 0 – 0.1 ICEO VCE = –20V, IB = 0 –100 IEBO VEB = –5V, IC = 0 –10 * Unit µA µA Forward current transfer ratio hFE VCE = –10V, IC = 1mA 70 Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 150 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCB = –10V, IE = 1mA, f = 2MHz 22 60 Ω 1.2 2.0 pF Common emitter reverse transfer capacitance *h FE MHz IC = –10mA, IB = –1mA – 0.1 V VCE = –10V, IC = –1mA – 0.7 V VCE = –10V, IC = –1mA Cre 220 300 f = 10.7MHz Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 Marking Symbol EB EC 1 2SA1790 Transistor PC — Ta IC — VCE 125 –25 100 75 50 25 IB=–250µA –20 –200µA –15 –150µA –30 –10 –3 –1 Ta=75˚C 25˚C –100µA –25˚C – 0.1 –50µA – 0.03 0 40 60 80 100 120 140 160 0 –2 –4 –6 80 25˚C –25˚C 60 40 20 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector output capacitance Cob (pF) Ta=75˚C f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 – 0.1 – 0.3 –100 Collector current IC (mA) –1 –3 –10 –30 –100 Collector to base voltage VCB (V) fT — IE 24 20 400 300 200 100 1 3 IC=–1mA f=10.7MHz Ta=25˚C 4 3 2 1 0 –1 –3 10 30 Emitter current IE (mA) 100 –10 –30 –100 NF — IE VCB=–10V f=100MHz Ta=25˚C 4 16 12 8 3 2 1 4 0.3 –100 5 Noise figure NF (dB) Power gain PG (dB) 500 –30 Collector to emitter voltage VCE (V) VCE=–10V f=100MHz Ta=25˚C VCB=–10V Ta=25˚C –10 5 PG — IC 600 –3 Cre — VCE 6 VCE=–10V –1 Collector current IC (mA) Cob — VCB 120 100 – 0.01 – 0.1 – 0.3 –10 Collector to emitter voltage VCE (V) hFE — IC 0 0.1 –8 Common emitter reverse transfer capacitance Cre (pF) 20 Ambient temperature Ta (˚C) Forward current transfer ratio hFE IC/IB=10 – 0.3 –10 –5 0 Transition frequency fT (MHz) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 0 2 VCE(sat) — IC –100 –30 Collector current IC (mA) Collector power dissipation PC (mW) 150 0 – 0.1 – 0.3 –1 –3 –10 –30 Collector current IC (mA) –100 0 0.1 0.3 1 3 Emitter current IE (mA) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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