Transistor 2SC3936 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.1±0.1 ■ Features 0.3–0 0.65 1 0.65 1.3±0.1 +0.1 0.425 3 Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0 to 0.1 Symbol 0.15–0.05 0.2 2 (Ta=25˚C) Parameter ■ Electrical Characteristics 1.25±0.1 0.7±0.1 ■ Absolute Maximum Ratings 2.0±0.2 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : K (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V * Forward current transfer ratio hFE VCE = 10V, IC = 1mA 70 Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz 150 Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz *h FE 250 230 MHz 1.3 pF Rank classification Rank B C hFE 70 ~ 160 110 ~ 250 Marking Symbol KB KC 1 Transistor 2SC3936 PC — Ta IC — VCE 12 Ta=25˚C 10 160 120 80 40 8 60µA 6 40µA 4 20µA 80 100 120 140 160 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V 50 40 25˚C 30 –25˚C 20 10 0 0.4 0.8 1.2 12 18 1.6 2.0 30 10 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 1 3 fT — IE 10 30 Reverse transfer impedance Zrb (Ω) 400 VCB=10V 6V 200 100 –1 –3 –10 250 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 0.1 0.3 –30 Emitter current IE (mA) –100 70 60 50 40 VCB=6V 10V 20 10 0 – 0.1 – 0.3 –1 3 10 30 100 Cre — VCE f=2MHz Ta=25˚C 30 1 Collector current IC (mA) Zrb — IE 500 180 VCE=10V 100 80 Ta=25˚C 120 300 IC/IB=10 Collector current IC (mA) 600 0 – 0.1 – 0.3 60 Base current IB (µA) hFE — IC 100 Base to emitter voltage VBE (V) 300 0 VCE(sat) — IC 60 0 4 Collector to emitter voltage VCE (V) IC — VBE Ta=75˚C 6 0 0 Forward current transfer ratio hFE 60 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 40 8 2 0 20 Ambient temperature Ta (˚C) Collector current IC (mA) 10 80µA 2 0 Transition frequency fT (MHz) VCE=10V Ta=25˚C IB=100µA Collector current IC (mA) 200 0 2 IC — I B 12 Collector current IC (mA) Collector power dissipation PC (mW) 240 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC3936 Cob — VCB bie — gie 1.2 1.0 0.8 0.6 0.4 Reverse transfer susceptance bre (mS) 1.4 0 yie=gie+jbie VCE=10V Input susceptance bie (mS) Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 100 10 6 25 4 10.7 IE=– 0.1mA –1mA –2mA –4mA –7mA 2 f=0.45MHz 0 1 3 10 30 0 100 Collector to base voltage VCB (V) 4 8 –2mA 25 –4mA 58 100 10.7 –40 100 58 25 –60 58 IE=–7mA –80 –100 40 –4mA 100 –2.5 IE=–7mA –3.0 – 0.5 – 0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) –7mA 0.8 58 60 80 Forward transfer conductance 100 gfe (mS) –4mA –2mA –1mA – 0.4mA 0.6 25 IE=– 0.1mA 0.4 10.7 0.2 yoe=goe+jboe VCE=10V f=0.45MHz 0 20 –2mA –2.0 100 1.0 yfe=gfe+jbfe VCE=10V –120 0 –1mA f=0.45MHz 10.7 58 100 – 0.4mA –1.5 1.2 0.45 10.7 25 –1mA 100 20 58 –1.0 boe — goe Output susceptance boe (mS) – 0.1mA –20 – 0.4mA 16 Input conductance gie (mS) bfe — gfe 0 12 f=0.45MHz 10.7 25 yre=gre+jbre VCE=10V – 0.5 58 8 0.2 0 Forward transfer susceptance bfe (mS) bre — gre 12 1.6 0 0.2 0.4 0.6 0.8 1.0 Output conductance goe (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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