ETC 2SC4655B

Transistor
2SC4655
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
1.6±0.15
0.4
+0.1
0.5
1
3
0.5
1.6±0.1
●
Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1.0±0.1
●
0.8±0.1
0.2–0.05
■ Features
0.4
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
30
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
–55 ~ +125
˚C
■ Electrical Characteristics
+0.1
0.15–0.05
0 to 0.1
(Ta=25˚C)
0.45±0.1 0.3
■ Absolute Maximum Ratings
0.75±0.15
2
1:Base
2:Emitter
3:Collector
0.2±0.1
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : K
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
Forward current transfer ratio
hFE*
VCE = 10V, IC = 1mA
70
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz
150
Common emitter reverse transfer capacitance
Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
*h
FE
V
250
230
MHz
1.3
pF
Rank classification
Rank
B
C
hFE
70 ~ 160
110 ~ 250
Marking Symbol
KB
KC
1
Transistor
2SC4655
PC — Ta
IC — VCE
12
Ta=25˚C
10
100
75
50
25
8
60µA
6
40µA
4
20µA
80 100 120 140 160
6
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
50
40
25˚C
30
–25˚C
20
10
0
0.4
0.8
1.2
12
18
1.6
2.0
30
10
3
1
0.3
Ta=75˚C
25˚C
0.1
–25˚C
0.03
0.01
0.1
0.3
1
3
fT — IE
10
30
Reverse transfer impedance Zrb (Ω)
400
VCB=10V
6V
200
100
–1
–3
–10
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
0.1
0.3
–30
Emitter current IE (mA)
–100
70
60
50
40
VCB=6V
10V
20
10
0
– 0.1
– 0.3
–1
3
10
30
100
Cre — VCE
f=2MHz
Ta=25˚C
30
1
Collector current IC (mA)
Zrb — IE
500
180
VCE=10V
100
80
Ta=25˚C
120
300
IC/IB=10
Collector current IC (mA)
600
0
– 0.1 – 0.3
60
Base current IB (µA)
hFE — IC
100
Base to emitter voltage VBE (V)
300
0
VCE(sat) — IC
60
0
4
Collector to emitter voltage VCE (V)
IC — VBE
Ta=75˚C
6
0
0
Forward current transfer ratio hFE
60
–3
Emitter current IE (mA)
–10
Common emitter reverse transfer capacitance Cre (pF)
40
8
2
0
20
Ambient temperature Ta (˚C)
Collector current IC (mA)
10
80µA
2
0
Transition frequency fT (MHz)
VCE=10V
Ta=25˚C
IB=100µA
Collector current IC (mA)
125
0
2
IC — I B
12
Collector current IC (mA)
Collector power dissipation PC (mW)
150
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
Transistor
2SC4655
Cob — VCB
bie — gie
1.2
1.0
0.8
0.6
0.4
Reverse transfer susceptance bre (mS)
1.4
0
yie=gie+jbie
VCE=10V
Input susceptance bie (mS)
Collector output capacitance Cob (pF)
IE=0
f=1MHz
Ta=25˚C
100
10
6
25
4
10.7
IE=– 0.1mA
–1mA
–2mA
–4mA
–7mA
2
f=0.45MHz
0
1
3
10
30
0
100
Collector to base voltage VCB (V)
4
8
25
100
58
–1mA
–4mA
58
10.7
100
100
58
25
–60
58
IE=–7mA
–80
–100
40
–4mA
100
–2.5
IE=–7mA
–3.0
– 0.5
– 0.4
– 0.3
– 0.2
– 0.1
0
Reverse transfer conductance gre (mS)
–7mA
0.8
58
60
80
Forward transfer conductance
100
gfe (mS)
–4mA
–2mA
–1mA
– 0.4mA
0.6
25
IE=– 0.1mA
0.4
10.7
0.2
yoe=goe+jboe
VCE=10V
f=0.45MHz
0
20
–2mA
–2.0
100
1.0
yfe=gfe+jbfe
VCE=10V
–120
0
–1mA
f=0.45MHz
10.7
25
100
– 0.4mA
–1.5
1.2
0.45
10.7
–2mA
–40
20
58
–1.0
boe — goe
Output susceptance boe (mS)
– 0.1mA
–20
– 0.4mA
16
Input conductance gie (mS)
bfe — gfe
0
12
f=0.45MHz
10.7
25
yre=gre+jbre
VCE=10V
– 0.5
58
8
0.2
0
Forward transfer susceptance bfe (mS)
bre — gre
12
1.6
0
0.2
0.4
0.6
0.8
1.0
Output conductance goe (mS)
3
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2001 MAR