Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0 to 0.1 Parameter 0.15–0.05 (Ta=25˚C) Collector to base voltage ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 2.0±0.2 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 0.425 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : U (Ta=25˚C) Parameter Symbol Conditions min typ max 30 Unit Collector to base voltage VCBO IC = 10µA, IE = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 3 Forward current transfer ratio hFE* VCB = 6V, IE = –1mA 65 Base to emitter voltage VBE VCB = 6V, IE = 1mA Transition frequency fT VCB = 6V, IE = –1mA, f = 200MHz Common emitter reverse transfer capacitance Cre VCE = 6V, IC = 1mA, f = 10.7MHz 0.8 Power gain PG VCB = 6V, IE = –1mA, f = 100MHz 24 dB Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz 3.3 dB *h FE 450 V V 260 0.72 V 650 MHz 1 pF Rank classification Rank C D hFE 65 ~ 160 100 ~ 260 Marking Symbol UC UD 1 Transistor 2SC3931 PC — Ta IC — VCE 12 Ta=25˚C 10 160 120 80 40 80µA 8 60µA 6 40µA 4 20µA 80 100 120 140 160 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=6V 25˚C –25˚C 20 15 10 5 0 0 0.4 0.8 1.2 12 1.6 2.0 30 10 3 1 0.3 25˚C 0.1 0.01 0.1 Ta=75˚C –25˚C 0.03 0.3 1 3 1000 800 600 400 200 –10 –30 Emitter current IE (mA) –100 Reverse transfer impedance Zrb (Ω) VCB=6V Ta=25˚C 10 30 300 240 Ta=75˚C 180 25˚C –25˚C 120 60 0 0.1 100 0.3 60 40 20 – 0.3 –1 3 10 30 100 Cre — VCE 80 0 – 0.1 1 Collector current IC (mA) VCB=6V f=2MHz Ta=25˚C 100 180 VCE=6V Zrb — IE 120 120 360 IC/IB=10 fT — IE –3 60 Base current IB (µA) Collector current IC (mA) 1200 –1 0 hFE — IC 100 Base to emitter voltage VBE (V) 0 – 0.1 – 0.3 18 VCE(sat) — IC 30 Ta=75˚C 4 Collector to emitter voltage VCE (V) IC — VBE 25 6 0 0 Forward current transfer ratio hFE 60 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 40 8 2 0 20 Ambient temperature Ta (˚C) Collector current IC (mA) 10 2 0 Transition frequency fT (MHz) VCE=6V Ta=25˚C IB=100µA Collector current IC (mA) 200 0 2 IC — I B 12 Collector current IC (mA) Collector power dissipation PC (mW) 240 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC3931 Cob — VCB PG — IE 0.8 0.6 0.4 12 f=100MHz Rg=50Ω Ta=25˚C 35 30 VCE=10V 25 6V 20 15 10 8 6 4 0.2 VCE=6V, 10V 2 5 0 5 10 15 20 25 0 – 0.1 – 0.3 30 Collector to base voltage VCB (V) Reverse transfer susceptance bre (mS) 150 –7mA 100 –2mA 100 12 58 10 IE=– 0.5mA –1mA 8 6 58 25 4 25 2 f=10.7MHz 0 0 3 –30 6 9 0 – 0.1 – 0.3 –100 –1 12 15 Input conductance gie (mS) –10 –30 –100 bfe — gfe 0 10.7 25 yre=gre+jbre VCE=10V –1 –4mA –2 –1mA 58 IE=–7mA –3 –4 100 –5 10.7 58 – 0.4mA –1mA 100 –20 150 –2mA –40 150 –4mA 100 58 –60 f=150MHz IE=–7mA 100 –80 –100 f=150MHz –6 – 0.5 –3 Emitter current IE (mA) bre — gre –4mA 16 14 –10 0 yie=gie+jbie VCE=10V 18 –3 Emitter current IE (mA) bie — gie 20 –1 Forward transfer susceptance bfe (mS) 0 Input susceptance bie (mS) f=100MHz Rg=50kΩ Ta=25˚C 10 Noise figure NF (dB) IE=0 f=1MHz Ta=25˚C 1.0 NF — IE 40 Power gain PG (dB) Collector output capacitance Cob (pF) 1.2 yfe=gfe+jbfe VCE=10V –120 – 0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) boe — goe IE=– 0.5mA –1mA Output susceptance boe (mS) 1.2 1.0 150 –2mA –4mA 100 0.8 –7mA 0.6 58 0.4 25 0.2 yoe=goe+jboe VCE=10V f=10.7MHz 0 0 2 4 6 8 10 Output conductance goe (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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