Power Transistors 2SB0954, 2SB0954A (2SB954, 2SB954A) Silicon PNP epitaxial planar type For power amplification ■ Features Parameter Symbol Collector to 2SB0954 base voltage 2SB0954A Collector to 2SB0954 Ratings –60 V –80 Emitter to base voltage VEBO –5 V Peak collector current ICP –2 A IC Collector current Collector power TC=25°C dissipation –1 Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SB0954 current 2SB0954A Collector cutoff 2SB0954 current 2SB0954A ICEO ICES IEBO Emitter cutoff current Collector to emitter 2SB0954 voltage 2SB0954A Forward current transfer ratio Conditions 4.2±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) min typ max VCE = –30V, IB = 0 –300 VCE = –60V, IB = 0 –300 VCE = –60V, VBE = 0 –200 VCE = –80V, VBE = 0 –200 VEB = –5V, IC = 0 –1 –60 VCEO IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = – 0.2A 70 15 hFE2 VCE = –4V, IC = –1A Collector to emitter saturation voltage VCE(sat) IC = –1A, IB = – 0.125A Base to emitter voltage VBE VCE = –4V, IC = –1A Transition frequency fT VCE = –5V, IC = – 0.2A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 0.8±0.1 1.3±0.2 (TC=25˚C) Parameter Collector cutoff 1.4±0.1 W 2 ■ Electrical Characteristics φ3.1±0.1 A 30 PC Ta=25°C 0.7±0.1 V –80 VCEO emitter voltage 2SB0954A 2.7±0.2 Unit –60 VCBO 4.2±0.2 5.5±0.2 7.5±0.2 16.7±0.3 ■ Absolute Maximum Ratings (TC=25˚C) 10.0±0.2 4.0 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● Solder Dip ● Unit: mm IC = –1A, IB1 = – 0.1A, IB2 = 0.1A, VCC = –50V Unit µA µA mA V –80 250 –1 –1.3 V V 30 MHz 0.5 µs 1.2 µs 0.3 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note.) The Part numbers in the Parenthesis show conventional part number. 1 Power Transistors 2SB0954, 2SB0954A PC — Ta IC — VCE 30 (1) 20 10 TC=25˚C –30mA –2.0 –25mA –1.5 –20mA –10mA –1.0 –8mA –6mA –4mA – 0.5 (2) –6 25˚C TC=100˚C –25˚C –4 –2 (4) 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –1 –2 –3 –4 –5 25˚C – 0.3 TC=100˚C –25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 300 100 1000 TC=100˚C 25˚C –25˚C 30 10 3 –1 –3 Area of safe operation (ASO) ICP t=10ms IC DC – 0.1 – 0.03 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE 10 (V) –1 –3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C –3 30 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 103 –10 – 0.01 –1 100 Collector current IC (A) –100 – 0.3 300 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 –2.0 VCE=–5V f=10MHz TC=25˚C 3000 3000 Collector current IC (A) –30 –1.6 fT — IC Transition frequency fT (MHz) –1 –1.2 VCE=–4V Forward current transfer ratio hFE –3 – 0.8 10000 1000 –10 – 0.1 – 0.4 Base to emitter voltage VBE (V) hFE — IC IC/IB=10 –1 0 10000 –30 –3 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 Collector current IC (A) –8 –2mA (3) 0 2 VCE=–4V Collector current IC (A) 40 –10 IB=–40mA (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE –2.5 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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