ETC 2SD1269Q

Power Transistors
2SD1269
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB0944 (2SB944)
Unit: mm
●
0.7±0.1
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
130
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
8
A
Collector current
IC
4
A
Collector power TC=25°C
dissipation
35
PC
Ta=25°C
Junction temperature
Tj
Storage temperature
Tstg
4.2±0.2
7.5±0.2
16.7±0.3
φ3.1±0.1
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
150
˚C
–55 to +150
˚C
(TC=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
ICBO
VCB = 100V, IE = 0
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
80
hFE1
VCE = 2V, IC = 0.1A
45
hFE2*
VCE = 2V, IC = 1A
60
Forward current transfer ratio
1.3±0.2
W
2
■ Electrical Characteristics
2.7±0.2
4.0
●
Low collector to emitter saturation voltage VCE(sat)
Satisfactory linearity of foward current transfer ratio hFE
Large collector current IC
Full-pack package which can be installed to the heat sink with
one screw
14.0±0.5
●
4.2±0.2
5.5±0.2
Solder Dip
■ Features
●
10.0±0.2
typ
max
Unit
10
µA
50
µA
V
260
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.15A
0.5
V
Base to emitter saturation voltage
VBE(sat)
IC = 3A, IB = 0.15A
1.5
V
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
*h
FE2
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
30
MHz
0.5
µs
2.5
µs
0.15
µs
Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
Note.) The Part number in the Parenthesis shows conventional part number.
1
Power Transistors
2SD1269
IC — VCE
40
(1)
30
20
(2)
10
TC=25˚C
7
Collector current IC (A)
(3)
(4)
IB=300mA
6
140mA
120mA
100mA
5
60mA
4
40mA
3
20mA
2
10mA
1
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
12
3
TC=100˚C
–25˚C
25˚C
0.1
0.03
0.1
0.3
1
3
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
0.1
0.3
1
3
Switching time ton,tstg,tf (µs)
100
30
10
100
Collector to base voltage VCB (V)
10
100
30
10
10
3
0.3
1
3
10
Non repetitive pulse
TC=25˚C
30
tstg
1
0.1
Area of safe operation (ASO)
tf
0.3
ton
0.1
10 ICP
IC
t=0.5ms
3
10ms
1
1ms
0.3
DC
0.1
0.03
0.01
30
3
100
0.03
3
1
Collector current IC (A)
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2)
VCC=50V
TC=25˚C
30
300
0.3
300
1
0.01 0.03
10
ton, tstg, tf — IC
1000
0.1
VCE=10V
f=10MHz
TC=25˚C
Collector current IC (A)
IE=0
f=1MHz
TC=25˚C
10
0.001
0.01 0.03
3
100
3
0.003
1000
Cob — VCB
1
0.01
3000
1
0.01 0.03
10
10000
0.3
0.03
VCE=2V
3000
Collector current IC (A)
3000
–25˚C
0.1
fT — IC
1000
0.01
0.01 0.03
25˚C
0.3
Collector current IC (A)
Transition frequency fT (MHz)
10
0.3
TC=100˚C
1
10000
IC/IB=20
1
IC/IB=20
3
hFE — IC
30
1
0.1
10
10000
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
8
10
Collector to emitter voltage VCE (V)
VBE(sat) — IC
100
Collector output capacitance Cob (pF)
6
Collector current IC (A)
Collector power dissipation PC (W)
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
0
2
VCE(sat) — IC
8
Collector to emitter saturation voltage VCE(sat) (V)
PC — Ta
50
0.01
0
1
2
3
4
Collector current IC (A)
5
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
Power Transistors
2SD1269
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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2001 MAR