Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0930 (2SB930) and 2SB0930A (2SB930A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage VEBO 5 V Peak collector current ICP 8 A Collector current IC 4 A 0.8±0.1 Collector power TC=25°C dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ˚C –55 to +150 ˚C Symbol 2SD1253 current 2SD1253A Collector cutoff 2SD1253 current 2SD1253A ICES ICEO IEBO Emitter cutoff current Collector to emitter 2SD1253 voltage 2SD1253A Forward current transfer ratio Conditions 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 min typ max 400 VCE = 80V, VBE = 0 400 VCE = 30V, IB = 0 700 VCE = 60V, IB = 0 700 VEB = 5V, IC = 0 1 60 VCEO IC = 30mA, IB = 0 hFE1* VCE = 4V, IC = 1A 40 15 hFE2 VCE = 4V, IC = 3A VBE VCE = 4V, IC = 3A Collector to emitter saturation voltage VCE(sat) IC = 4A, IB = 0.4A Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf FE1 1 VCE = 60V, VBE = 0 Base to emitter voltage *h 5.08±0.5 (TC=25˚C) Parameter Collector cutoff 0 to 0.4 1.1 max. W 1.3 ■ Electrical Characteristics R0.5 R0.5 2.54±0.3 150 14.7±0.5 VCEO Unit: mm 8.5±0.2 +0 2SD1253 emitter voltage 2SD1253A V 80 1.5–0.4 Collector to 60 VCBO 1:Base 2:Collector 3:Emitter N Type Package 3 10.0±0.3 2SD1253A 2 Unit 2.0 2SD1253 base voltage Ratings 4.4±0.5 Symbol Collector to 0.5max. 5.08±0.5 (TC=25˚C) 1 Parameter 1.1max. +0.4 ■ Absolute Maximum Ratings 1.5max. 3.0–0.2 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.4±0.5 ● 1.0±0.1 2.0 ● 6.0±0.5 10.5min. ■ Features 3.4±0.3 8.5±0.2 IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V Unit µA µA mA V 80 250 2 1.5 V V 20 MHz 0.4 µs 1.2 µs 0.5 µs Rank classification Rank R Q P hFE1 40 to 90 70 to 150 120 to 250 Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1253, 2SD1253A PC — Ta IC — VCE IC — VBE 6 (1) 40 30 20 8 TC=25˚C 10 VCE=4V 7 IB=150mA 5 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 100mA 4 80mA 60mA 40mA 3 30mA 2 20mA 10mA 25˚C 6 TC=100˚C –25˚C 0.4 1.2 5 4 3 2 1 (2) 1 5mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 4 12 16 3000 Transition frequency fT (MHz) TC=100˚C 1 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 300 1000 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 t=10ms IC 1ms 300ms 1 0.3 0.01 1 3 10 30 2SD1253A 2SD1253 0.1 0.03 100 300 Collector to emitter voltage VCE 10 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 3 30 1 0.01 0.03 10 103 10 ICP 100 Collector current IC (A) Area of safe operation (ASO) 30 300 3 1 0.01 0.03 10 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 2.4 VCE=10V f=1MHz TC=25˚C 3000 1000 3 2.0 fT — IC VCE=4V Forward current transfer ratio hFE 10 1.6 10000 IC/IB=10 30 0.8 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 10000 100 Collector current IC (A) 2 20 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 8 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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