ETC 2SD1480P

Power Transistors
2SD1480
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1052
0.7±0.1
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
4
A
Collector current
IC
2
A
Collector power TC=25°C
dissipation
Junction temperature
Tj
Storage temperature
Tstg
25
4.2±0.2
7.5±0.2
φ3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5 +0.2
–0.1
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
150
˚C
–55 to +150
˚C
(TC=25˚C)
Parameter
Symbol
Collector cutoff current
2.7±0.2
W
2
■ Electrical Characteristics
4.2±0.2
5.5±0.2
2.54±0.25
PC
Ta=25°C
16.7±0.3
●
10.0±0.2
4.0
●
High forward current transfer ratio hFE which has satisfactory
linearity
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with
one screw
14.0±0.5
●
Features
Solder Dip
■
Unit: mm
max
Unit
ICES
VCE = 60V, VBE = 0
Conditions
min
typ
200
µA
ICEO
VCE = 30V, IB = 0
300
µA
Emitter cutoff current
IEBO
VEB = 6V, IC = 0
1
mA
Collector to emitter voltage
VCEO
IC = 30mA, IB = 0
60
hFE1
VCE = 4V, IC = 0.1A
35
hFE2*
VCE = 4V, IC = 1A
70
Base to emitter voltage
VBE
VCE = 4V, IC = 1A
Collector to emitter saturation voltage
VCE(sat)
IC = 2A, IB = 0.2A
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
Forward current transfer ratio
*h
FE2
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
V
250
1.2
2
V
V
20
MHz
0.2
µs
3.5
µs
0.7
µs
Rank classification
Rank
Q
P
hFE2
70 to 150
120 to 250
1
Power Transistors
2SD1480
PC — Ta
IC — VCE
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2.0W)
30
(1)
25
15
(2)
IB=100mA
80mA
3
50mA
40mA
30mA
2
20mA
10mA
1
25
50
75
100
125
150
2
4
3
2
6
8
10
12
0
Collector to emitter voltage VCE (V)
VCE(sat) — IC
hFE — IC
3000
Transition frequency fT (MHz)
25˚C
1
0.3
–25˚C
0.1
0.03
0.01
0.01 0.03
0.1
0.3
1
3
TC=100˚C
300
25˚C
100
–25˚C
30
10
3
0.1
0.3
1
3
Area of safe operation (ASO)
t=10ms
3
IC
1ms
1
DC
0.3
0.1
0.03
0.01
3
10
30
100
300
Collector to emitter voltage VCE
1000
(V)
Thermal resistance Rth(t) (˚C/W)
10
ICP
100
30
10
3
1
0.1
0.01 0.03
10
0.1
0.3
1
3
Collector current IC (A)
Rth(t) — t
102
3.0
VCE=10V
f=1MHz
TC=25˚C
300
Collector current IC (A)
Non repetitive pulse
TC=25˚C
2.5
0.3
1
0.01 0.03
10
100
30
2.0
fT — IC
1000
TC=100˚C
1.5
VCE=4V
Forward current transfer ratio hFE
10
1.0
1000
IC/IB=10
30
3
0.5
Base to emitter voltage VBE (V)
10000
100
Collector current IC (A)
Collector current IC (A)
4
0
0
Ambient temperature Ta (˚C)
2
–25˚C
1mA
0
1
TC=100˚C
1
5mA
(4)
0
25˚C
5
4
(3)
5
VCE=4V
TC=25˚C
20
10
6
Collector current IC (A)
35
0
Collector to emitter saturation voltage VCE(sat) (V)
IC — VBE
5
Collector current IC (A)
Collector power dissipation PC (W)
40
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
10
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2001 MAR