ETC 2SB0948AP

Power Transistors
2SB0948, 2SB0948A (2SB948, 2SB948A)
Silicon PNP epitaxial planar type
Unit: mm
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Collector to base
voltage
2SB0948
Collector to
emitter voltage
2SB0948
Rating
−40
VCBO
−20
VCEO
4.2±0.2
2.7±0.2
16.7±0.3
φ 3.1±0.1
1.4±0.1
0.8±0.1
V
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F Package
1 2 3
V
VEBO
−5
V
Peak collector current
ICP
−20
A
IC
−10
A
PC
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current
TC = 25°C
Ta = 25°C
0.5+0.2
–0.1
2.54±0.3
−40
2SB0948A
1.3±0.2
5.08±0.5
−50
2SB0948A
5.5±0.2
Unit
Emitter to base voltage
Collector power
dissipation
14.0±0.5
• Low collector to emitter saturation voltage VCE(sat)
• High-speed switching
• Full-pack package which can be installed to the heat sink with one
screw
4.2±0.2
Solder Dip
(4.0)
■ Features
10.0±0.2
7.5±0.2
0.7±0.1
For low-voltage switching
Complementary to 2SD1445 and 2SD1445A
2
■ Electrical Characteristics TC = 25°C
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SB0948
Conditions
ICBO
VCB = −40 V, IE = 0
IEBO
VEB = −5 V, IC = 0
VCEO
IC = −10 mA, IB = 0
hFE1
VCE = −2 V, IC = − 0.1 A
45
VCE = −2 V, IC = −3 A
90
hFE2
*
Collector to emitter saturation voltage
VCE(sat)
IC = −10 A, IB = − 0.33 A
Base to emitter saturation voltage
VBE(sat)
IC = −10 A, IB = − 0.33 A
Transition frequency
Typ
Max
Unit
−50
µA
−50
µA
−20
V
−40
2SB0948A
Forward current transfer ratio
Min
fT
260
− 0.6
−1.5
V
V
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
100
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
400
pF
Turn-on time
ton
IC = −3 A, IB1 = − 0.1 A, IB2 = 0.1 A
0.1
µs
Storage time
tstg
0.5
µs
Fall time
tf
0.1
µs
Note) *: Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Note.) The Part numbers in the Parenthesis show conventional part number.
1
2SB0948, 2SB0948A
Power Transistors
IC  VCE
30
(1)
20
10
–60mA
–50mA
–8
–40mA
–35mA
–6
–25mA
–4
–15mA
–10mA
–5mA
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
–2
–4
–12
100˚C
25˚C
– 0.03
– 0.3
–1
–3
300
25˚C
TC=100˚C
100
–25˚C
30
10
3
300
100
30
10
3
Cob  VCB
–1
–3
–10
–30
1
– 0.01 – 0.03 – 0.1 – 0.3
–100
ton, tstg, tf  IC
IE=0
f=1MHz
TC=25˚C
Switching time ton,tstg,tf (µs)
100
30
10
Pulsed tw=1ms
Duty cycle=1%
IC/IB=30
(–IB1=IB2)
VCC=–20V
TC=25˚C
3
–30
1
tstg
0.3
ton
Non repetitive pulse
TC=25˚C
ICP
t=1ms
–10
IC
10ms
–3
DC
–1
– 0.3
0.1
tf
– 0.1
0.03
0.01
–10
–30
–100
Collector to base voltage VCB (V)
–10
Area of safe operation (ASO)
– 0.03
–3
–3
–100
3
–1
–1
Collector current IC (A)
10
300
1
– 0.1 – 0.3
VCE=–10V
f=10MHz
TC=25˚C
Collector current IC (A)
10000
–10
1000
1
– 0.1 – 0.3
–10
1000
–3
3000
Collector current IC (A)
3000
–1
VCE=–2V
3000
Collector current IC (A)
– 0.01
– 0.1
– 0.3
Collector current IC (A)
fT  I C
1000
TC=–25˚C
–1
– 0.01
– 0.1
10000
10000
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
–3
– 0.1
Collector output capacitance Cob (pF)
–10
hFE  IC
IC/IB=30
– 0.3
2
–8
–25˚C
Collector to emitter voltage VCE (V)
VBE(sat)  IC
–10
–6
TC=100˚C
25˚C
– 0.03
Transition frequency fT (MHz)
0
–1
– 0.1
–20mA
(4)
–3
– 0.3
–30mA
–2
(2)
(3)
–80mA
–10
IC/IB=30
0
–1
–2
–3
–4
–5
–6
–7
Collector current IC (A)
–8
– 0.01
– 0.1 – 0.3
2SB0948A
40
TC=25˚C
IB=–100mA
–10
2SB0948
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
Collector current IC (A)
Collector power dissipation PC (W)
VCE(sat)  IC
–12
Collector to emitter saturation voltage VCE(sat) (V)
PC  T a
50
–1
–3
–10
–30
–100
Collector to emitter voltage VCE (V)
Power Transistors
2SB0948, 2SB0948A
Rth(t)  t
Thermal resistance Rth(t) (˚C/W)
103
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR