Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • High collector to base voltage VCBO • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating 4.2±0.2 φ 3.1±0.1 1.4±0.1 500 V VCEO 400 V VEBO 5 V Peak collector current ICP 10 A IC 6 A PC 40 W Ta = 25°C 0.5+0.2 –0.1 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F Package 1 2 3 Emitter to base voltage 1.3±0.2 0.8±0.1 2.54±0.3 VCBO TC = 25°C 2.7±0.2 5.08±0.5 Collector to emitter voltage Collector power dissipation 5.5±0.2 Unit Collector to base voltage Collector current 4.2±0.2 Solder Dip (4.0) 16.7±0.3 ■ Features 10.0±0.2 7.5±0.2 0.7±0.1 For power amplification Internal Connection C 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Collector to emitter voltage * Emitter to base voltage ICBO VCB = 350 V, IE = 0 VCEO(sus) IC = 2 A, L = 10 mH VEBO Forward current transfer ratio Conditions IE = 0.1 A, IC = 0 Min Typ Max Unit 100 µA 400 V 5 V hFE VCE = 2 V, IC = 2 A Collector to emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.06 A 1.5 V Base to emitter saturation voltage VBE(sat) IC = 3 A, IB = 0.06 A 2.5 V Transition frequency fT 500 VCE = 10 V, IC = 1 A, f = 1 MHz 15 MHz Note) *: VCEO(sus) Test circuit 50/60Hz mercury relay X L 10mH Y 120Ω 6V 1Ω 15V G 1 2SD1446 Power Transistors PC T a IC VCE VCE(sat) IC TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 60 50 (1) 40 Collector to emitter saturation voltage VCE(sat) (V) 5 Collector current IC (A) Collector power dissipation PC (W) 80 30 20 IB=8mA 4 3 4.0mA 3.5mA 3.0mA 2.5mA 2 2.0mA 1 1.5mA (2) 10 (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 4 5 10 3 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 Collector output capacitance Cob (pF) 30000 10000 3000 TC=–25˚C 1 1000 100˚C 25˚C 0.3 0.1 0.03 0.1 0.3 1 3 300 TC=100˚C 100 25˚C 30 –25˚C 10 0.01 0.03 10 0.1 0.3 1 3 102 t=10µs IC 3 1ms DC 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Thermal resistance Rth(t) (˚C/W) ICP 10 3 10 103 102 10 0.3 1 3 10 30 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 100 Collector to base voltage VCB (V) Rth(t) t Area of safe operation (ASO) 100 30 1 IE=0 f=1MHz TC=25˚C 1 0.1 10 Collector current IC (A) Non repetitive pulse TC=25˚C 0.3 Cob VCB VCE=2V Forward current transfer ratio hFE 10 0.1 Collector current IC (A) 104 IC/IB=50 30 3 25˚C TC=100˚C 1 hFE IC Collector current IC (A) Collector current IC (A) 30 100000 0.01 0.01 0.03 2 6 IC/IB=50 Collector to emitter voltage VCE (V) VBE(sat) IC 100 Base to emitter saturation voltage VBE(sat) (V) 3 100 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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