ETC 2SD1250/2SD1250A

Power Transistors
2SD1250, 2SD1250A
Silicon NPN triple diffusion planar type
●
●
●
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage VCE(sat)
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Unit: mm
1.0±0.1
1.5±0.1
10.0±0.3
6.0±0.5
1.5max.
1.1max.
2.0
■ Features
3.4±0.3
8.5±0.2
10.5min.
For power amplification
For TV vartical deflection output
Complementary to 2SB0928 (2SB928) and 2SB0928A (2SB928A)
0.8±0.1
0.5max.
2.54±0.3
5.08±0.5
V
180
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
3
A
Collector current
IC
2
A
3.4±0.3
6.0±0.3
1.0±0.1
0.8±0.1
R0.5
R0.5
0 to 0.4
2.54±0.3
Collector power TC=25°C
dissipation
Junction temperature
Tj
Storage temperature
Tstg
■ Electrical Characteristics
Parameter
1.1 max.
30
PC
Ta=25°C
14.7±0.5
150
8.5±0.2
+0.4
200
VCEO
emitter voltage 2SD1250A
Unit: mm
V
3.0–0.2
2SD1250
VCBO
+0
2SD1250A
Collector to
Unit
200
1.5–0.4
base voltage
Ratings
1:Base
2:Collector
3:Emitter
N Type Package
3
10.0±0.3
2SD1250
2
2.0
Symbol
Collector to
1
4.4±0.5
Parameter
(TC=25˚C)
4.4±0.5
■ Absolute Maximum Ratings
5.08±0.5
W
1.3
150
˚C
–55 to +150
˚C
1
2
1:Base
2:Collector
3:Emitter
N Type Package (DS)
3
(TC=25˚C)
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 200V, IE = 0
50
µA
Emitter cutoff current
IEBO
VEB = 4V, IC = 0
50
µA
VCBO
IC = 500µA, IE = 0
Collector to base voltage
Collector to emitter
2SD1250
voltage
2SD1250A
Emitter to base voltage
IC = 5mA, IB = 0
VEBO
IE = 500µA, IC = 0
6
*
V
150
VCEO
hFE1
Forward current transfer ratio
200
V
180
VCE = 10V, IC = 150mA
60
hFE2
VCE = 10V, IC = 400mA
50
V
240
Base to emitter voltage
VBE
VCE = 10V, IC = 400mA
1
V
Collector to emitter saturation voltage
VCE(sat)
IC = 500mA, IB = 50mA
1
V
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
*h
FE1
20
MHz
Rank classification
Rank
Q
P
hFE1
60 to 140
100 to 240
Note)The part numbers in the parenthesis show conventional part number.
1
Power Transistors
2SD1250, 2SD1250A
PC — Ta
IC — VCE
IC — VBE
1.2
40
(1)
30
20
1.2
TC=25˚C
IB=7mA
1.0
10
0.8
5mA
4mA
0.6
3mA
0.4
2mA
0.2
TC=100˚C
–25˚C
0.8
0.6
0.4
0.2
1mA
(2)
25˚C
1.0
6mA
Collector current IC (A)
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
Collector current IC (A)
Collector power dissipation PC (W)
50
(3)
0
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
4
8
16
20
3
TC=100˚C
0.3
25˚C
–25˚C
0.1
0.03
0.01
0.01
0.03
0.1
0.3
3000
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
5ms
1ms
0.3
1s
0.1
0.03
0.003
0.001
1
3
10
30
100
2SD1250A
2SD1250
0.01
300
Collector to emitter voltage VCE
1000
0.1
0.3
1
3
100
30
10
3
1
0.1
0.01 0.03
10
(V)
0.1
0.3
1
3
Collector current IC (A)
Rth(t) — t
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
1.2
VCE=10V
f=1MHz
TC=25˚C
300
Collector current IC (A)
t=0.5ms
1.0
0.3
1
0.01 0.03
1
Thermal resistance Rth(t) (˚C/W)
IC
1
0.8
VCE=10V
Non repetitive pulse
TC=25˚C
ICP
0.6
fT — IC
Area of safe operation (ASO)
3
0.4
1000
1000
1
0.2
Base to emitter voltage VBE (V)
10000
Forward current transfer ratio hFE
IC/IB=10
10
Collector current IC (A)
0
hFE — IC
10
Collector current IC (A)
2
24
Collector to emitter voltage VCE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
12
Transition frequency fT (MHz)
0
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
10
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2001 MAR