ETC 2SC3314C

Transistor
2SC3314
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1323
Unit: mm
3.0±0.2
4.0±0.2
■ Features
■ Absolute Maximum Ratings
marking
(Ta=25˚C)
1
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
30
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
2
3
2.0±0.2
●
15.6±0.5
●
Optimum for high-density mounting.
Allowing supply with the radial taping.
Optimum for RF amplification of FM/AM radios.
High transition frequency fT.
0.7±0.1
●
+0.2
0.45–0.1
●
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
V
Forward current transfer ratio
hFE
*
VCE = 10V, IC = 1mA
70
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 1mA
Base to emitter voltage
VBE
VCE = 10V, IC = 1mA
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz
Noise figure
NF
VCB = 10V, IE = –1mA, f = 5MHz
4.0
dB
Common emitter reverse transfer capacitance
Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
1.5
pF
Reverse transfer impedance
Zrb
VCB = 10V, IE = –1mA, f = 2MHz
50
Ω
*h
FE
220
0.1
150
V
0.7
V
300
MHz
2.8
Rank classification
Rank
B
C
hFE
70 ~ 140
110 ~ 220
1
2SC3314
Transistor
PC — Ta
IC — VCE
60
300
200
100
50
160
IB=100µA
120
80µA
80
60µA
40µA
40
25˚C
40
Ta=75˚C
–25˚C
30
20
10
20µA
0
60
80 100 120 140 160
0
0
2
10
3
1
Ta=75˚C
25˚C
0.1
–25˚C
0.03
3
10
30
10
– 0.3
–1
–3
Emitter current IE (mA)
–10
Common emitter reverse transfer capacitance Cre (pF)
20
1.6
2.0
25˚C
120
–25˚C
80
40
600
500
VCE=10V
400
6V
300
200
100
0.3
1
3
10
30
0
– 0.1 – 0.3
100
24
f=10.7MHz
Ta=25˚C
2.5
20
2.0
1mA
IC=3mA
1.0
0.5
0
0.1
–3
–10
–30
–100
PG — IE
3.0
1.5
–1
Emitter current IE (mA)
Cre — VCE
30
1.2
700
Collector current IC (mA)
VCB=10V
f=2MHz
Ta=25˚C
0.8
Ta=25˚C
Ta=75˚C
160
0
0.1
100
40
0
– 0.1
0.4
Base to emitter voltage VBE (V)
800
Zrb — IE
50
0
fT — I E
200
Collector current IC (mA)
60
12
VCE=10V
Forward current transfer ratio hFE
30
1
10
240
IC/IB=10
0.3
8
hFE — IC
100
0.01
0.1
6
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.3
4
Transition frequency fT (MHz)
40
Power gain PG (dB)
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
200
400
0
Reverse transfer impedance Zrb (Ω)
VCE=10V
Ta=25˚C
0
2
IC — VBE
240
Collector current IC (mA)
Collector power dissipation PC (mW)
500
VCE=10V
f=100MHz
Ta=25˚C
16
12
8
4
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
0
– 0.1 – 0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100
2SC3314
Transistor
NF — IE
Cob — VCB
12
5
Noise figure NF (dB)
10
Collector output capacitance Cob (pF)
VCB=6V
f=100MHz
Rg=50Ω
Ta=25˚C
8
6
4
2
0
– 0.1
IE=0
f=1MHz
Ta=25˚C
4
3
2
1
0
– 0.3
–1
–3
Emitter current IE (mA)
–10
1
3
10
30
100
Collector to base voltage VCB (V)
3
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2001 MAR