ETC 2SK2174L

2SK2174 L , 2SK2174 S
Silicon N Channel MOS FET
Application
HDPAK
4
High speed power switching
Features
•
•
•
•
4
1 2
Low on–resistance
High speed switching
No secondary breakdown
Suitable for Switching regulator, DC – DC
converter
3
2, 4
1
1
3
1.
2.
3.
4.
2
3
Gate
Drain
Source
Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
500
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±30
V
———————————————————————————————————————————
Drain current
ID
20
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
80
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
20
A
———————————————————————————————————————————
Channel dissipation
Pch**
120
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
2SK2174 L , 2SK2174 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source breakdown
voltage
V(BR)DSS
500
—
—
V
ID = 10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current
IDSS
—
—
250
µA
VDS = 400 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to source on state
resistance
RDS(on)
—
0.22
0.27
Ω
ID = 10 A
VGS = 10 V *
———————————————————————————————————————————
Forward transfer admittance
|yfs|
10
16
—
S
ID = 10 A
VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
2800
—
pF
VDS = 10 V
————————————————————————————————
Output capacitance
Coss
—
780
—
pF
VGS = 0
————————————————————————————————
Reverse transfer capacitance
Crss
—
90
—
pF
f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
td(on)
—
32
—
ns
ID = 10 A
————————————————————————————————
Rise time
tr
—
115
—
ns
————————————————————————————————
Turn–off delay time
td(off)
—
200
—
ns
VGS = 10 V
RL = 3 Ω
————————————————————————————————
Fall time
tf
—
90
—
ns
———————————————————————————————————————————
Body–drain diode forward
voltage
VDF
—
1.0
—
V
IF = 20 A, VGS = 0
———————————————————————————————————————————
Body–drain diode reverse
recovery time
trr
—
500
—
µs
IF = 20 A, VGS = 0,
diF / dt = 100 A / µs
———————————————————————————————————————————
* Pulse Test
■ See characteristic curves of 2SK1170.
2SK2174 L , 2SK2174 S
Power vs. Temperature Derating
Channel Dissipation
Pch (W)
160
120
80
40
0
50
100
Case Temperature
150
Tc (°C)
200