ETC 2SC5441

Power Transistors
2SC5441, 2SC5441A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5±0.5
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
1500
V
VCES
1500
V
Collector to emitter voltage
VCEO
600
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
20
A
Collector current
IC
15
A
Base current
IB
8
A
Collector power TC=25°C
Ta=25°C
dissipation
100
PC
Junction temperature
Tj
Storage temperature
Tstg
3.5
■ Electrical Characteristics
2SC5441
current
2SC5441A
10.0
23.4
22.0±0.5
26.5±0.5
2.0 1.2
5.45±0.3
5°
0.7±0.1
5.45±0.3
5°
1
2
3
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
W
150
˚C
–55 to +150
˚C
(TC=25˚C)
Symbol
Parameter
Collector cutoff
2.0
(TC=25˚C)
5°
5°
5°
4.0
2.0±0.2
1.1±0.1
18.6±0.5
■ Absolute Maximum Ratings
5°
5.5±0.3
●
2.0
●
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
3.3±0.3
0.7±0.1
●
3.0±0.3
φ3.2±0.1
4.5
■ Features
ICBO
Conditions
min
typ
VCB = 1000V, IE = 0
max
Unit
50
µA
VCB = 1500V, IE = 0
1
mA
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
50
µA
Forward current transfer ratio
hFE
VCE = 5V, IC = 7.5A
Collector to emitter saturation voltage
VCE(sat)
IC = 7.5A, IB = 1.88A
Base to emitter saturation voltage
VBE(sat)
IC = 7.5A, IB = 1.88A
Transition frequency
fT
VCE = 10V, IC = 0.1A, f = 0.5MHz
Storage time
tstg
Fall time
tf
IC = 7.5A, IB1 = 1.88A, IB2 = –3.76A
5
12
3
1.5
3
V
V
MHz
3.0
µs
0.2
µs
1
Power Transistors
2SC5441, 2SC5441A
PC — Ta
VCE(sat) — IC
200
150
100
25˚C
TC=100˚C
4000
–25˚C
3000
(1)
100
2000
50
1000
(2)
20
40
60
80 100 120 140 160
0
0.1
Ambient temperature Ta (˚C)
1
Area of safe operation (ASO)
f=64kHz, TC<90˚C
Area of safe operation with
respect to the single pulse
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
t=100µs
1ms
Collector current IC (A)
10ms
IC
DC
1
0.1
20
15
10
5
0.01
0.001
<1mA
0
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
0
500
1000
1500
VCE=5V
TC=100˚C
25˚C
10
–25˚C
1
0.001
0.01
0.1
1
10
Collector current IC (A)
Area of safe operation, horizontal operation ASO
25
10
100
Collector current IC (A)
100
ICP
10
2SC5441
2SC5441A
(3)
0
Collector current IC (A)
IC/IB=4
Forward current transfer ratio hFE
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(PC=12W)
(3) Without heat sink
(PC=3.5W)
0
2
hFE — IC
5000
Collector to emitter saturation voltage VCE(sat) (V)
Collector power dissipation PC (W)
250
2000
Collector to emitter voltage VCE (V)
100