7MBR50NE060 IGBT Modules IGBT MODULE 600V / 50A / PIM Features · High Speed Switching · Voltage Drive · Low Inductance Module Structure · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless without specified) Inverter Item Symbol Collector-Emitter voltage Gate-Emitter voltage IC Collector current Condition VCES VGES ICP Continuous 1ms Converter Brake -IC Collector power disspation PC Collector-Emitter voltage Gate-Emitter voltage VCES Collector current IC 1 device VGES ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Average forward current Surge current Repetitive peak reverse voltage IF(AV) IFSM VRRM Non-Repetitive peak reverse voltage VRSM Average output current IO Surge current (Non-Repetitive) IFSM I²t (Non-Repetitive) Operating junction temperature Tj Storage temperature Isolation voltage Mounting screw torque Tstg Viso *1 Recommendable value : 1.3 to 1.7 N·m (M4) Continuous 1ms 1 device 10ms 50Hz/60Hz sine wave Tj=150°C, 10ms Tj=150°C, 10ms Ra ting 600 ±20 50 100 50 200 600 ±20 50 100 200 600 1 V V A A A W V V A A W V 50 800 A A V 900 50 V A 350 648 +150 -40 to +125 AC : 1 minute Unit AC 2500 1.7 *1 A A²s °C °C V N·m 7MBR50NE060 IGBT Module Electrical characteristics (Tj=25°C unless without specified) Item Symbol Condition Converter Brake (FWD) Brake (IGBT) Inverter (IGBT) Min. Zero gate voltage collector current Gate-Emitter leakage current ICES IGES Gate-Emitter threshold voltage Collector-Emitter saturation voltage VGE(th) VCE(sat) VCE=600V, VGE=0V VCE=0V, VGE=±20V VCE=20V, IC=50mA VGE=15V, Ic=50A Collector-Emitter voltage Input capacitance -VCE -Ic=50A Cies VGE=0V, VCE=10V, f=1MHz Switching time ton tr Characteristics Typ. Max. 1.0 20 4.5 Unit mA µA 7.5 2.8 V V 3.0 V pF VCC=300V IC=50A 1.2 0.6 µs µs toff VGE=±15V tf RG=51 ohm 1.0 0.35 µs µs Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current trr IF=50A VCES=600V, VGE=0V µs mA µA Collector-Emitter saturation voltage Switching time VCE(sat) VCE=0V, VGE=±20V IC=50A, VGE=15V 0.3 1.0 0.1 ton VCC=300V 2.8 0.8 V µs tr toff IC=50A VGE=±15V 0.6 1.0 µs µs tf RG=51ohm IRRM VR=600V 0.35 1.0 0.6 1.55 1.0 µs mA µs V mA Reverse current Reverse recovery time Forward voltage Reverse current ICES IGES 3300 trr VFM IRRM IF=50A VR=800V Thermal Characteristics Item Symbol Condition Min. Thermal resistance ( 1 device ) Contact thermal resistance * Rth(j-c) Rth(c-f) Inverter IGBT Inverter FRD Brake IGBT Converter Diode With thermal compound * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic * NLU (Over current Limiting circuit) Characteristics Typ. Max. 0.63 1.60 0.63 2.10 0.05 Unit °C/W IGBT Module 7MBR50NE060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=125°C 125 125 100 100 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25°C 75 50 0 0 0 1 2 3 4 5 0 1 2 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C VCE [V] 10 Collector-Emitter voltage : 8 6 4 2 0 8 6 4 2 0 0 5 10 15 20 25 0 5 10 Gate-Emitter voltage : VGE [V] 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=51 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=300V, RG=51 ohm, VGE=±15V, Tj=125°C 1000 Switching time : ton, tr, toff, tf [n sec.] 1000 Switching time : ton, tr, toff, tf [n sec.] 3 Collector-Emitter voltage : VCE [V] 10 VCE [V] 50 25 25 Collector-Emitter voltage : 75 100 100 10 10 0 20 40 Collector current : Ic [A] 60 80 0 20 40 Collector current : Ic [A] 60 80 7MBR50NE060 IGBT Module Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] 1000 100 10 500 25 400 20 300 15 200 10 100 5 0 0 0 100 10 50 100 150 200 250 300 Gate charge : Qg [nC] Gate resistance : RG [ohm] FWD Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 125 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Forward current : IF [A] 100 75 50 25 100 10 0 0 1 2 3 0 4 20 40 60 80 100 Forward current : IF [A] Forward voltage : VF [V] Reversed biased safe operating area > < 125°C, RG = +VGE=15V, -VGE < = 15V, Tj = 51 ohm Transient thermal resistance 400 1 Collector current : Ic [A] Thermal resistance : Rth (j-c) [°C/W] 500 0.1 300 200 100 0 0.001 0.01 Pulse width : PW [sec.] 0.1 1 0 100 200 300 400 Collector-Emitter voltage : VCE [V] 500 600 Gate-Emitter voltage : VGE [V] Dynamic input characteristics Tj=25°C Switching time vs. RG Vcc=300V, Ic=50A, VGE=±15V, Tj=25°C IGBT Module 7MBR50NE060 Capacitance vs. Collector-Emitter voltage Tj=25°C Switching loss vs. Collector current Vcc=300V, RG=51 ohm, VGE=±15V 5 Capacitance : Cies, Coes, Cres [nF] Switching loss : Eon, Eoff, Err [mJ /cycle] 10 4 3 2 1 1 0.1 0 0 20 40 60 0 80 Converter Diode Forward current vs. Forward voltage 60 Forward current : IF [A] 50 40 30 20 10 0 0 0.5 1.0 Forward voltage : VF [V] 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Collector current : Ic [A] 1.5 2.0 30 35 IGBT Module Outline Drawings, mm 7MBR50NE060