Composite Transistors XN0A554 (XN6A554) Silicon NPN epitaxial planer transistor ● ● 3 2 0.4±0.2 5° Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. Low VCE(sat). 2.8+0.2 –0.3 6 Features 1 (0.65) ● 5 0.16+0.10 –0.06 1.50+0.25 –0.05 4 ■ Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) For high speed switching 0.30+0.10 –0.05 0.50+0.10 –0.05 2SC3757 × 2 elements 0 to 0.1 ● 1.1+0.2 –0.1 ■ Basic Part Number of Element ■ Absolute Maximum Ratings Parameter 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Collector (Tr2) (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 40 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 40 V VEBO 5 V IC 100 mA Peak collector current ICP 300 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature ■ Electrical Characteristics Parameter Collector cutoff current Internal Connection 6 4 Symbol Conditions ICBO VCB = 40V, IE = 0 min IEBO VEB = 4V, IC = 0 VCE = 1V, IC = 10mA 60 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 1V, IC = 10mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Base to emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA Transition frequency fT VCE = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Turn-off time ton Turn-on time toff Storage time tstg Test Circuits 1 2 Tr2 3 (Ta=25˚C) hFE *2 Tr1 5 Emitter cutoff current Ratio between 2 elements 4 : Emitter (Tr2) 5 : Emitter (Tr1) 6 : Base (Tr1) EIAJ : SC–74 Mini6-G1 Package Marking Symbol: DT Forward current transfer ratio *1 1.1+0.3 –0.1 10° typ max Unit 0.1 µA 0.1 µA 320 0.99 0.17 0.25 1.0 450 2 V V MHz 6 pF 17 *2 17 ns 10 Note) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN0A554 ton, toff Test Circuit 90Ω Vin=10V 500Ω 3.3kΩ 90% Vbb=2V 0 Vin 10% Vout 10% 10% Vin VCC=10V 50Ω VCC=3V 10% Vout Total power dissipation PT (mW) 0.1µF 500Ω 50Ω Vbb= –3V Vin 1kΩ 910Ω 220Ω 50Ω Vout A Vout 3.3kΩ 500 0.1µF 0.1µF Vin=10V PT — Ta tstg Test Circuit 90% Vout ton tstg toff (Wave form at A) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC — VCE VCE(sat) — IC IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 IC/IB=10 30 10 3 1 25˚C 0.3 0.1 Collector to emitter voltage VCE (V) –25˚C 1 3 30 400 300 Ta=75˚C 25˚C –25˚C 1 3 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 1 100 10 3 30 Collector current IC (mA) 100 100 300 1000 Cob — VCB 500 400 300 200 100 0 –1 30 Collector current IC (mA) 6 VCE=10V Ta=25˚C Transition frequency fT (MHz) 500 0.3 10 fT — I E VCE=1V Forward current transfer ratio hFE 10 600 100 30 0.01 0.3 hFE — IC 200 IC/IB=10 Collector current IC (mA) 600 0 0.1 Ta=75˚C 0.03 0.01 0.1 1.2 100 Collector output capacitance Cob (pF) Collector current IC (mA) 100 Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C 2 VBE(sat) — IC 100 Base to emitter saturation voltage VBE(sat) (V) 120 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA) 1 3 10 30 100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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