ETC 2SA1806R

Transistor
2SA1806
Silicon PNP epitaxial planer type
For high speed switching
Unit: mm
1.6±0.15
Ratings
Unit
VCBO
–15
V
Collector to emitter voltage
VCEO
–15
V
Emitter to base voltage
VEBO
–4
V
Peak collector current
ICP
–100
mA
Collector current
IC
–50
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
–55 ~ +125
˚C
■ Electrical Characteristics
+0.1
0.5
0.5
3
+0.1
0.15–0.05
Symbol
1
0 to 0.1
Parameter
0.4
2
(Ta=25˚C)
Collector to base voltage
0.8±0.1
0.45±0.1 0.3
■ Absolute Maximum Ratings
1.6±0.1
●
1.0±0.1
●
High-speed switching.
Low collector to emitter saturation voltage VCE(sat).
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
0.75±0.15
●
0.4
0.2–0.05
■ Features
1:Base
2:Emitter
3:Collector
0.2±0.1
EIAJ:SC–75
SS–Mini Type Package
Marking symbol :
AK
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = –8V, IE = 0
– 0.1
µA
Emitter cutoff current
IEBO
VEB = –3V, IC = 0
– 0.1
µA
hFE1
Forward current transfer ratio
*
hFE2
VCE = –1V, IC = –10mA
50
VCE = –1V, IC = –1mA
30
Collector to emitter saturation voltage
VCE(sat)
IC = –10mA, IB = – 1mA
Transition frequency
fT
VCB = –10V, IE = 10mA, f = 200MHz
Collector output capacitance
Cob
Turn-on time
ton
Turn-off time
Storage time
*h
FE1
150
– 0.1
800
– 0.2
V
1500
MHz
VCB = –5V, IE = 0, f = 1MHz
1
pF
(Note 1) Next page
12
ns
toff
(Note 1) Next page
20
ns
tstg
(Note 1) Next page
19
ns
Rank classification
Rank
Q
R
hFE1
50 ~ 120
90 ~ 150
Marking Symbol
AKQ
AKR
1
Transistor
2SA1806
Switching time measurement circuit
ton, toff Test Circuit
VBB
VCC=–1.5V
VBB=–10V
VCC=–3V
2kΩ
62Ω
508Ω
30Ω
Vout
52Ω
0.1µF
Vin
Vout
34Ω
51Ω
51Ω
Vin
150
Collector power dissipation PC (mW)
0.1µF
Vin
PC — Ta
tstg Test Circuit
0
10%
Vin
90%
90%
Vout
0
90%
90%
Vout
10%
toff
Vin=9.0V
ton
toff
Vin=–5.8V
Vin=9.8V
VBB=Ground VBB=–8.0V
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
Ta=25˚C
IB=–600µA
–50
–500µA
–400µA
–40
–300µA
–30
–200µA
Collector to emitter saturation voltage VCE(sat) (V)
–100
–60
Collector current IC (mA)
VBE(sat) — IC
IC/IB=10
–30
–10
Ta=75˚C
25˚C
–25˚C
–3
–1
– 0.3
–20
–100µA
–10
– 0.1
–2
–4
–6
–8
–10
–12
– 0.01
–1
–3
–10
–30
Transition frequency fT (MHz)
Forward current transfer ratio hFE
2000
160
120
80
25˚C
–25˚C
800
400
0
–3
–10
–30
Collector current IC (mA)
–100
1
3
10
–10
–30
–100 –300 –1000
Cob — VCB
1200
Ta=75˚C
–3
2.4
1600
–1
– 0.01
–1
Collector current IC (mA)
VCB=–10V
f=200MHz
Ta=25˚C
VCE=–10V
2
–100 –300 –1000
fT — IE
2400
200
Ta=–25˚C
25˚C
75˚C
–1
Collector current IC (mA)
hFE — IC
240
0
– 0.1 – 0.3
–3
– 0.03
Collector to emitter voltage VCE (V)
40
–10
– 0.1
Collector output capacitance Cob (pF)
0
IC/IB=10
–30
– 0.3
– 0.03
0
–100
Base to emitter saturation voltage VBE(sat) (V)
IC — VCE
30
Emitter current IE (mA)
100
IE=0
f=1MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
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2001 MAR