ETC BC447/D

BC447, BC449, BC449A
High Voltage Transistors
PNP Silicon
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MAXIMUM RATINGS
Rating
Symbol
Value
Collector-Emitter Voltage
BC447
BC449, BC449A
VCEO
Collector-Base Voltage
BC447
BC449, BC449A
VCBO
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current – Continuous
IC
300
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
–55 to
+150
°C
Operating and Storage Junction
Temperature Range
COLLECTOR
1
Unit
Vdc
80
100
2
BASE
Vdc
80
100
TJ, Tstg
Moisture Sensitivity Level (MSL)
Electrostatic Discharge (ESD)
3
EMITTER
1
2
3
CASE 29
TO–92
STYLE 17
MSL: 1
NA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
RθJA
200
°C/W
Thermal Resistance,
Junction to Case
RθJC
83.3
°C/W
MARKING DIAGRAM
BC
44xx
YWW
BC44xx
xx
Y
WW
= Specific Device Code
= 7, 9 or 9A
= Year
= Work Week
ORDERING INFORMATION
Device
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 0
1
Package
Shipping
BC447
TO–92
5000 Units/Box
BC449
TO–92
5000 Units/Box
BC449A
TO–92
5000 Units/Box
Publication Order Number:
BC447/D
BC447, BC449, BC449A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
80
100
–
–
–
–
80
100
–
–
–
–
5.0
–
–
–
–
–
–
100
100
50
120
50
100
50
60
–
–
–
–
–
–
460
220
–
–
–
–
–
0.125
0.25
–
0.85
–
0.55
–
–
0.76
0.7
1.2
100
200
–
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CEO
BC447
BC449, BC449A
V(BR)CBO
BC447
BC449, BC449A
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Vdc
Vdc
V(BR)EBO
Vdc
ICBO
BC447
BC449, BC449A
nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
BC447, BC449
BC449A
BC447, BC449
BC449A
BC447, BC449
BC449A
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VBE(sat)
Base–Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc) (Note 1)
VBE(on)
–
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle 2%
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2
MHz
300
40
200
-5.0 V
Cibo
C, CAPACITANCE (pF)
100
70
10
8.0
6.0
50
30
-1.0
-5.0 -7.0 -10
-2.0 -3.0
2.0
-0.1 -0.2
-50 -70 -100
-20 -30
-0.5 -1.0
-2.0
-5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Current–Gain — Bandwidth Product
Figure 2. Capacitance
VCC = -40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
200
-1.0 k
-700
-500
-300
-200
tf
100
70
50
-100
-70
-50
tr
30
20
td @ VBE(off) = -0.5 V
-10
-20
-30
-50
-70
-100
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPS8598
DUTY CYCLE ≤ 10%
MPS8599
-30
-20
-10
-200
-1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Switching Times
Figure 4. Active–Region Safe Operating Area
300
1.0
TJ = 125°C
200
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
25°C
100
70
-50 -100
-10 -20
IC, COLLECTOR CURRENT (mA)
300
h FE, DC CURRENT GAIN
Cobo
4.0
1.0 k
700
500
t, TIME (ns)
20
VCE = -1.0 V
10
25°C
TTJJ==25°C
TJ = 25°C
I C , COLLECTOR CURRENT (mA)
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
BC447, BC449, BC449A
-55°C
VCE = -5.0 V
50
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
30
-0.2
-0.5
-1.0 -2.0
-5.0
-10
-20
0
0.2
-50 -100 -200
0.5
1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. DC Current Gain
Figure 6. “ON” Voltages
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3
50
100
200
IC =
10 mA
1.6
IC =
50 mA
IC =
20 mA
IC =
100 mA
R VB , TEMPERATURE COEFFICIENT (mV/ °C)
2.0
IC =
200 mA
1.2
0.8
0.4
TJ = 25°C
0
0.02
0.05
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
BC447, BC449, BC449A
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1
0.2
1.0
0.5
2.0
10
5.0
20
-1.4
-1.8
RVB FOR VBE
-55°C TO 125°C
-2.2
-2.6
-3.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Region
Figure 8. Base–Emitter Temperature
Coefficient
200
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
ZθJC(t) = r(t) • RθJC
TJ(pk) - TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA
TJ(pk) - TA = P(pk) ZθJA(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
(SEE AN469)
P(pk)
0.01
t1
SINGLE PULSE
0.03
t2
0.02
0.01
-1.0
DUTY CYCLE, D = t1/t2
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
t, TIME (ms)
Figure 9. Thermal Response
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4
2.0 k
5.0 k
10 k
20 k
50 k 100 k
BC447, BC449, BC449A
PACKAGE DIMENSIONS
TO–92
(TO–226)
CASE 29–11
ISSUE AL
A
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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5
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
BC447, BC449, BC449A
Notes
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6
BC447, BC449, BC449A
Notes
http://onsemi.com
7
BC447, BC449, BC449A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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BC447/D