Composite Transistors XN6542 Silicon NPN epitaxial planer transistor Unit: mm For high frequency amplification, oscillation, and mixing (Tr1), For medium-frequency amplification (Tr2) +0.2 2.8 –0.3 +0.25 1 ■ Basic Part Number of Element ■ Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector to base voltage VCBO 45 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4 V Collector current IC 50 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 0.95 +0.1 +0.1 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) Absolute Maximum Ratings (Ta=25˚C) Ratings Tr2 0.95 0.4±0.2 Symbol Tr1 3 0.1 to 0.3 2SC2480+2SC4444 Parameter 4 0 to 0.05 ● 2 0.16–0.06 +0.2 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.1–0.1 ● 5 0.8 +0.2 2.9 –0.05 ■ Features 1.9±0.1 +0.1 6 1.45±0.1 0.65±0.15 0.5 –0.05 1.5 –0.05 0.3 –0.05 0.65±0.15 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5Z Internal Connection 6 Tr1 2 5 4 1 Tr2 3 1 Composite Transistors XN6542 ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Symbol min typ max 30 Unit VCBO IC = 100µA, IE = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 3 Forward current transfer ratio hFE VCB = 10V, IE = –2mA 25 Base to emitter voltage VBE VCB = 10V, IE = –2mA 720 Common emitter reverse transfer capacitance Cre VCB = 10V, IE = –1mA, f = 10.7MHz 1.0 1.5 pF V 1300 1600 MHz V 250 mV Transition frequency fT VCB = 10V, IE = –15mA, f = 200MHz Power gain PG VCB = 10V, IE = –1mA, f = 100MHz 20 dB Reverse transfer capacitance Crb VCE = 6V, IC = 0, f = 1MHz 0.8 pF ● 1000 Tr2 Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 45 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 35 V Emitter to base voltage VEBO IE = 10µA, IC = 0 4 Collector cutoff current ICEO VCE = 20V, IB = 0 Forward current transfer ratio hFE VCB = 10V, IE = –10mA Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 2mA Transition frequency fT VCB = 10V, IE = –10mA, f = 100MHz Common emitter reverse transfer capacitance Cre VCB = 10V, IE = –1mA, f = 10.7MHz Power gain PG VCB = 10V, IE = –10mA, f = 58MHz Common characteristics chart PT — Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) 2 Conditions Collector to base voltage V 10 20 50 100 0.5 300 500 V MHz 1.5 18 µA pF dB Composite Transistors XN6542 Characteristics charts of Tr1 IC — VCE IC — I B 24 IB — VBE 24 400 Ta=25˚C VCE=10V Ta=25˚C IB=300µA 250µA 16 200µA 12 150µA 8 100µA 4 Base current IB (µA) 20 Collector current IC (mA) 16 12 8 50µA 0 2 4 6 8 10 12 14 16 18 0 Collector to emitter voltage VCE (V) 100 IC — VBE 400 0 –25˚C 30 20 0 0.4 0.8 1.2 1.6 Ta=75˚C 120 25˚C –25˚C 80 40 0.3 1000 800 600 400 200 –1 –3 –10 –30 Emitter current IE (mA) –100 Common emitter reverse transfer capacitance Cre (pF) 1200 0 –0.1 –0.3 1 3 10 2.4 30 1 0.3 0.1 –25˚C 0.03 0.8 0.4 1 3 10 0.3 1 3 10 30 100 Zrb — IE 1.2 0.3 Ta=75˚C 25˚C Collector current IC (mA) 1.6 0 0.1 IC/IB=10 3 0.01 0.1 100 IC=1mA f=10.7MHz Ta=25˚C 2.0 2.0 10 Cre — VCE VCB=10V Ta=25˚C 1.6 30 Collector current IC (mA) fT — IE 1600 1.2 VCE(sat) — IC 160 0 0.1 2.0 0.8 100 200 Base to emitter voltage VBE (V) 1400 0.4 Base to emitter voltage VBE (V) VCE=10V 40 0 100 0 500 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 300 VCE=10V Forward current transfer ratio hFE Ta=75˚C 150 hFE — IC 10 Transition frequency fT (MHz) 200 240 50 200 Base current IB (µA) 60 25˚C 250 50 0 0 300 4 30 Collector to emitter voltage VCE 100 (V) 120 Reverse transfer impedance Zrb (Ω) Collector current IC (mA) 20 VCE=10V Ta=25˚C 350 VCB=10V f=2MHz Ta=25˚C 100 80 60 40 20 0 –0.1 –0.2 –0.3 –0.5 –1 –2 –3 –5 –10 Emitter current IE (mA) 3 Composite Transistors XN6542 PG — IE NF — IE 40 0 VCB=10V f=100MHz Rg=50Ω Ta=25˚C 10 Noise figure NF (dB) 30 25 20 15 10 yib=gib+jbib VCB=10V Input susceptance bib (mS) VCB=10V f=100MHz Rg=50Ω Ta=25˚C 35 Power gain PG (dB) bib — gib 12 8 6 4 2 –10 –20 IE=–2mA f=900MHz –5mA –30 600 500 300 –40 200 –50 5 0 –0.1 –0.3 –1 –3 –10 –30 0 –0.1 –0.3 –100 Emitter current IE (mA) –60 –1 brb — grb –30 –100 0 bfb — gfb 300 –0.4 500 –0.8 600 –1.2 f=900MHz –2mA IE=–5mA –2.0 –2.4 –1.0 –0.8 –0.6 –0.4 –0.2 0 Reverse transfer conductance grb (mS) 20 30 40 50 bob — gob 12 yob=gob+jbob VCE=10V yfb=gfb+jbfb VCB=10V 40 IE=–5mA f=200MHz 32 300 –2mA 500 24 600 16 900 8 0 –60 Output susceptance bob (mS) 200 yrb=grb+jbrb VCB=10V –1.6 10 Input conductance gib (mS) 48 Forward transfer susceptance bfb (mS) Reverse transfer susceptance brb (mS) –10 Emitter current IE (mA) 0 4 –3 900 10 600 8 IE=–2mA –5mA 500 6 4 300 2 f=200MHz 0 –40 –20 0 20 40 Forward transfer conductance gfb (mS) 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) Composite Transistors XN6542 Characteristics charts of Tr2 IC — VCE IC — VBE 80 100 60 1.6mA 50 1.4mA 1.2mA 40 1.0mA 30 0.8mA 0.6mA 20 0.4mA 10 Ta=75˚C 50 Collector to emitter saturation voltage VCE(sat) (V) IB=2.0mA 1.8mA Collector current IC (mA) –25˚C 40 30 20 10 0.2mA 0 0 2 4 6 8 0 10 0 Collector to emitter voltage VCE (V) 0.4 0.8 1.2 1.6 hFE — IC Transition frequency fT (MHz) 80 Ta=75˚C 60 25˚C –25˚C 20 3 1 0.3 25˚C 10 30 100 –25˚C 0.03 1 0.3 400 300 200 100 –1 –3 –10 –30 Emitter current IE (mA) Collector current IC (mA) 3 10 30 100 Cob — VCB 500 0 –0.1 –0.3 Ta=75˚C 0.1 3.0 VCB=10V Ta=25˚C 100 1 3 fT — I E VCE=10V 0.3 10 Collector current IC (mA) 600 0 0.1 30 Base to emitter voltage VBE (V) 120 40 IC/IB=10 0.01 0.1 2.0 Collector output capacitance Cob (pF) Collector current IC (mA) 70 VCE=10V 25˚C Ta=25˚C Forward current transfer ratio hFE VCE(sat) — IC 60 –100 f=1MHz IE=0 Ta=25˚C 2.5 2.0 1.5 1.0 0.5 0 1 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) Common emitter reverse transfer capacitance Cre (pF) Cre — VCE 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 1 2 3 5 10 20 30 50 100 Collector to emitter voltage VCE (V) 5