Composite Transistors XN1509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC4561 × 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 ■ Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 4 0.95 ● Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.9 -0.05 ● 5 1.9±0.1 ■ Features 1.5 -0.05 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage of element Emitter to base voltage Collector current VCBO 50 V VCEO 50 V VEBO 5 V IC 50 mA Total power dissipation PT 200 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) Parameter Collector to base voltage 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Internal Connection 5 Tr1 1 4 Tr2 2 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V Collector cutoff current *1 0.4±0.2 Marking Symbol: AN 3 ■ Electrical Characteristics 0.1 to 0.3 ICBO VCB = 10V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA 200 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 2mA 0.5 500 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.06 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 250 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 1.5 pF 0.99 0.3 V Ratio between 2 elements 1 Composite Transistors XN1509 PT — Ta IC — VCE IC — VBE 60 120 240 VCE=10V 120 80 IB=300µA 80 250µA 60 200µA 150µA 40 100µA 40 80 120 2 VCE(sat) — IC 10 3 1 0.3 Ta=75˚C –25˚C 0.01 10 3 30 100 300 1000 Collector current IC (mA) Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 8 10 0 12 0.2 0.4 0.6 0.8 1.2 fT — I E VCB=10V Ta=25˚C 500 Ta=75˚C 400 25˚C –25˚C 300 200 100 0 0.1 1.0 Base to emitter voltage VBE (V) 600 0.3 1 3 10 30 Collector current IC (mA) Cob — VCB 6 6 VCE=10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 1 4 600 IC/IB=10 0.03 20 hFE — IC 100 25˚C 30 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) 0.1 40 0 0 160 Transition frequency fT (MHz) 0 –25˚C 50µA 0 0 Ta=75˚C 10 20 40 Collector current IC (mA) 160 25˚C 50 100 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 100 500 400 300 200 100 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100