DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 PINNING - SOT634A FEATURES • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A PIN – Output power = 20 W (AV) – Gain = 12 dB DESCRIPTION 1 drain 2 gate 3 source, connected to flange – Efficiency = 19% – ACPR = −42 dBc at 3.84 MHz • Easy power control 1 • Excellent ruggedness • High power gain • Excellent thermal stability 3 • Designed for broadband operation (2000 to 2200 MHz) 2 • Internally matched for ease of use. Top view APPLICATIONS MBL367 Fig.1 Simplified outline. • RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels, 3.84 MHz channel bandwidth; Peak/Average = 9.8 dB at 0.01% probability on CCDF. f (MHz) VDS (V) PL avg (W) Gp (dB) ηD (%) dim (dBc) 2110 to 2170 28 30 typ 12 typ 19 typ −42 MODE OF OPERATION single carrier W-CDMA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − VGS gate-source voltage − ±15 V ID drain current (DC) − tbd A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C 65 V CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Mar 07 2 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER CONDITIONS thermal resistance from junction to case VALUE UNIT 0.55 K/W note 1 Note 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 2.5 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 240 mA 4.5 − 5.5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 10 µA IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 40 nA gfs forward transconductance VDS = 10 V; ID = 16 A − 9.5 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 8 A − 0.07 − Ω Crss feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − tbd − pF 2003 Mar 07 3 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 APPLICATION INFORMATION RF performance at Th = 25 °C in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels, with 68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp common-source power gain VD = 28 V; Pout = 20 W (AV), single carrier W-CDMA; IDQ = 1000 mA; f = 2.11 to 2.17 GHz 11 12 − dB ηD drain efficiency VD = 28 V; Pout = 20 W (AV), single carrier W-CDMA; IDQ = 1000 mA; f = 2.11 to 2.17 GHz 17 19 − % ACPR adjacent channel power ratio VD = 28 V; Pout = 20 W (AV), single carrier W-CDMA; IDQ = 1000 mA; f = 2.11 to 2.17 GHz − −49 −39 dBc IRL input return loss VD = 28 V; Pout = 20 W (AV), single carrier W-CDMA; IDQ = 1000 mA; f = 2.11 to 2.17 GHz − −10 −6 dB ψ output mismatch VD = 28 V; Pout = 20 W (AV) single carrier W-CDMA;VSWR = 5:1 through all phases no degradation in RF performance before and after test RF performance at Th = 25 °C in a common source test circuit; two-carrier W-CDMA signals, 3GPP test mode 1 64 channels, with 68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF per channel frequency range is 2.11 GHz to 2.17 GHz; carrier spacing is 10 MHz. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp common-source power gain VD = 28 V; Pout = 20 W (AV); IDQ = 1000 mA − 12 − dB ηD drain efficiency VD = 28 V; Pout = 20 W (AV); IDQ = 1000 mA − 19 − % ACPR adjacent channel power ratio VD = 28 V; Pout = 20 W (AV); IDQ = 1000 mA; ACPR is measured at f1 = −5 MHz and f2 = +5 MHz − −40 − dBc d3 third order intermodulation distortion VD = 28 V; Pout = 20 W (AV); IDQ = 1000 mA; ACPR is measured at f1 = −10 MHz and f2 = +10 MHz − −36 − dB IRL input return loss VD = 28 V; Pout = 20 W (AV); IDQ = 1000 mA − −10 − dB 2003 Mar 07 4 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 2 leads SOT634A Package under development Philips Semiconductors reserves the right to make changes without notice. D A F 3 D1 U1 B q C c 1 L U2 p E1 E w1 M A M B M A 2 L Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 mm 4.83 3.68 12.82 12.57 0.15 0.08 22.58 22.12 22.56 22.15 inches 0.190 0.145 0.505 0.495 0.006 0.003 0.889 0.871 0.888 0.872 OUTLINE VERSION F L p Q q U1 U2 w1 w2 13.34 13.34 13.08 13.08 1.14 0.89 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 13.84 13.59 0.25 0.51 0.525 0.525 0.515 0.515 0.045 0.035 0.210 0.170 0.133 0.123 0.067 0.057 1.100 1.345 1.335 0.545 0.535 0.010 0.020 E1 E REFERENCES IEC JEDEC EIAJ SOT634A 2003 Mar 07 EUROPEAN PROJECTION ISSUE DATE 01-11-27 5 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Mar 07 6 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 NOTES 2003 Mar 07 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp8 Date of release: 2003 Mar 07 Document order number: 9397 750 10919