BSP 223 Preliminary data SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 223 600 V 0.38 A 5Ω SOT-223 BSP 223 Pin 4 S D Electrical Characteristics, at Tj = 25°C, unless otherwise specified Maximum Ratings Parameter Symbol Continuous drain current ID Values Unit A 0.38 TA = 25 °C DC drain current, pulsed IDpuls TA = 25 °C 1.52 Avalanche energy, single pulse mJ E AS ID = 1.4 A, VDD = 50 V, RGS = 25 Ω L = 122 mH, Tj = 25 °C 130 Gate source voltage V GS Power dissipation P tot TA = 25 °C Semiconductor Group ± 20 V W 1.8 1 25/09/1997 BSP 223 Preliminary data Maximum Ratings Parameter Symbol Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 70 Thermal resistance, junction-soldering point 1) RthJS ≤ 10 Values IEC climatic category, DIN IEC 68-1 Unit °C K/W 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 600 - - 2.1 3 4 V GS(th) V GS=V DS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS µA IDSS V DS = 600 V, V GS = 0 V, Tj = 25 °C - 0.1 1 V DS = 600 V, V GS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) V GS = 10 V, ID = 0.38 A Semiconductor Group nA IGSS - 2 4 5 25/09/1997 BSP 223 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 0.38 A Input capacitance 0.2 pF - 300 400 - 40 60 - 15 25 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 0.8 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 Ω Rise time - 8 12 - 12 18 - 45 65 - 25 40 tr V DD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 Ω Fall time tf V DD = 30 V, VGS = 10 V, ID = 0.3 A RG = 50 Ω Gate charge at threshold V DD = 40 V, ID ≥ 0.1 A, V GS 0 to 1 V Gate Charge at 7.0 V 0.6 - 13 20 - 16 25 V V (plateau) V DS = 15 V, ID = 0.4 A Semiconductor Group 0.4 Qg(total) V DD = 40 V, ID = 0.4 A, V GS 0 to 10 V Gate plateau voltage Qg(7) V DD = 40 V, ID = 0.4 A, V GS 0 to 7 V Gate Charge total nC Qg(th) - 3 4.4 - 25/09/1997 BSP 223 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TA = 25 °C Inverse diode direct current,pulsed - - 1.52 V 0.85 1.2 ns trr - 200 300 µC Qrr V R = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 0.38 - V R = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - V SD V GS = 0 V, IF = 0.76 A Reverse recovery time ISM TA = 25 °C Inverse diode forward voltage A IS - 4 0.65 1 25/09/1997 BSP 223 Preliminary data Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 2.0 0.40 W A 1.6 ID 0.32 1.4 0.28 1.2 0.24 1.0 0.20 0.8 0.16 0.6 0.12 0.4 0.08 0.2 0.04 0.0 0 20 40 60 80 100 120 °C 0.00 0 160 20 40 60 80 100 TA 120 °C 160 TA Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T 10 1 10 2 K/W A /I D 10 1 DS V = ZthJC 1 ms DS (o n) 10 0 10 0 R ID t = 340.0µs p 10 ms 10 -1 10 -1 D = 0.50 10 -2 0.20 0.10 10 -3 0.05 10 -2 single pulse 10 -4 0.02 0.01 DC 10 -3 0 10 10 1 10 2 V 10 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 3 VDS Semiconductor Group tp 5 25/09/1997 BSP 223 Preliminary data Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 0.9 kji f hg e d A ID 16 l Ptot = 2W a Ω c VGS [V] a 4.0 0.7 RDS (on) b 4.5 12 c 5.0 0.6 d 5.5 10 e 6.0 0.5 f 6.5 b g 7.0 b 8 h 7.5 0.4 0.3 i 8.0 j 8.5 6 c d k 9.0 l 10.0 h k j 4 0.2 a 2 VGS [V] = 0.1 a 4.0 4.5 0.0 0 2 4 6 8 10 12 e f g i 14 V 17 VDS b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i 8.0 8.5 j 9.0 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 k 10.0 A 0.50 ID Typ. transfer characteristics ID = f( VGS) parameter: tp = 80 µs V DS≥ 2 x ID x RDS(on)max 1.8 A ID 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 25/09/1997 BSP 223 Preliminary data Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.38 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 13 4.6 Ω V 11 RDS (on) 98% 4.0 VGS(th) 10 9 3.6 typ 3.2 8 2.8 7 98% 2.4 typ 2.0 2% 6 5 1.6 4 3 1.2 2 0.8 1 0.4 0 -60 -20 20 60 100 °C 0.0 -60 160 Tj -20 20 60 100 °C 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 4 10 1 pF A IF C 10 3 10 0 Ciss 10 2 10 -1 Tj = 25 °C typ Tj = 150 °C typ Coss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 Crss 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS Semiconductor Group 10 -2 0.0 7 25/09/1997 BSP 223 Preliminary data Avalanche energy EAS = ƒ(Tj) parameter: ID = 1.4 A, VDD = 50 V RGS = 25 Ω, L = 122 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 0 A 16 140 mJ V 120 EAS VGS 110 12 100 90 10 80 8 70 0,2 VDS max 0,8 VDS max 60 6 50 40 4 30 20 10 0 20 2 0 40 60 80 100 120 °C 160 Tj 0 2 4 6 8 10 12 14 16 nC 20 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 710 V 680 V(BR)DSS 660 640 620 600 580 560 540 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 25/09/1997