PHILIPS BYW29E-150

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
BYW29E series
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
QUICK REFERENCE DATA
VR = 150 V/ 200 V
k
1
VF ≤ 0.895 V
a
2
IF(AV) = 8 A
IRRM ≤ 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
PINNING
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYW29E series is supplied in
the conventional leaded SOD59
(TO220AC) package.
PIN
SOD59 (TO220AC)
DESCRIPTION
1
cathode
2
anode
tab
tab
cathode
2
1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
BYW29E
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
IRSM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Peak non-repetitive reverse
surge current
Operating junction
temperature
Storage temperature
MAX.
UNIT
-
-150
150
-200
200
V
-
150
200
V
-
150
200
V
square wave; δ = 0.5; Tmb ≤ 128 ˚C
-
8
A
square wave; δ = 0.5; Tmb ≤ 128 ˚C
-
16
A
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied VRRM(max)
tp = 2 µs; δ = 0.001
-
80
88
A
A
-
0.2
A
tp = 100 µs
-
0.2
A
-
150
˚C
- 40
150
˚C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
November 1998
1
MIN.
MAX.
UNIT
-
8
kV
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
in free air
TYP. MAX. UNIT
-
-
2.7
K/W
-
60
-
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
Qrr
trr1
trr2
Vfr
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
November 1998
CONDITIONS
MIN.
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRWM
VR = VRWM; Tj = 100˚C
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/µs
2
-
TYP. MAX. UNIT
0.8
0.92
1.1
2
0.2
4
20
15
1
0.895
1.05
1.3
10
0.6
11
25
20
-
V
V
V
µA
mA
nC
ns
ns
V
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
I
dI
F
BYW29E series
0.5A
F
dt
IF
t
0A
rr
time
Q
10%
s
I rec = 0.25A
IR
100%
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
I
Fig.4. Definition of trr2
12
F
Tmb(max) / C
108
D = 1.0
BYW29
PF / W
Vo = 0.791 V
Rs = 0.013 Ohms
115
10
0.5
8
time
122
0.2
6
129
0.1
VF
4
tp
I
V
143
t
T
0
time
Fig.2. Definition of Vfr
0
2
4
6
IF(AV) / A
8
10
150
12
Fig.5. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
R
8
PF / W
a = 1.57
Rs = 0.013 Ohms
129
2.8
5
Voltage Pulse Source
132.5
4
4
122
125.5
1.9
2.2
6
D.U.T.
Tmb(max) / C
BYW29
Vo = 0.791 V
7
136
3
139.5
2
143
1
146.5
to ’scope
0
0
1
2
3
4
IF(AV) / A
5
6
7
150
8
Fig.6. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
Fig.3. Circuit schematic for trr2
November 1998
136
tp
T
2
fr
VF
Current
shunt
D=
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
trr / ns
100 Qs / nC
1000
IF=10A
5A
2A
1A
IF=10A
100
10
IF=1A
10
1
1.0
1
10
dIF/dt (A/us)
100
1.0
Fig.7. Maximum trr at Tj = 25 ˚C.
100
Fig.10. Maximum Qs at Tj = 25 ˚C.
Irrm / A
10
10
-dIF/dt (A/us)
10
IF=10A
Transient thermal impedance, Zth j-mb (K/W)
1
1
IF=1A
0.1
0.1
PD
0.01
0.001
1us
0.01
10
-dIF/dt (A/us)
1
100
Fig.8. Maximum Irrm at Tj = 25 ˚C.
30
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYL1025
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
BYW29
IF / A
Tj=150 C
Tj=25 C
20
typ
max
10
0
0
0.5
1
VF / V
1.5
2
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
November 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1
(2x)
2
0,9 max (2x)
5,08
0,6
2,4
Fig.12. TO220AC; pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998
6
Rev 1.300