FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Rating Unit Drain-Source Voltage VDS 3.5 V Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VGS -3.0 180 -65 to +175 175 V mW °C °C Pt* Tstg Tch *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX04X Associated Gain Noise Figure FHX05X Associated Gain Noise Figure FHX06X Associated Gain IDSS gm Vp VGSO NF Gas NF Gas NF Maximum Available Gain Thermal Resistance Test Conditions VDS = 2V, VGS = 0V VDS = 2V, IDS = 10mA VDS = 2V, IDS = 1mA IGS = -10µA VDS = 2V IDS = 10mA f = 12GHz Gas Ga(max) Same as above, Gain matched Rth Channel to Case Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.3 October 2004 1 Min. 15 35 -0.2 -3.0 9.5 9.5 - Limit Typ. Max. 30 60 45 -0.7 -1.5 0.75 0.85 10.5 0.9 1.1 10.5 1.1 1.35 9.5 10.5 - dB 11.0 12.0 - dB - 220 300 °C/W Unit mA mS V V dB dB dB dB dB FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 Drain Current (mA) Total Power Dissipation (W) 200 150 100 50 0 0 50 100 150 -0.4V 10 0 200 1 2 -0.6V -0.8V 3 4 Drain-Source Voltage (V) NF & Gas vs. IDS OUTPUT POWER vs. INPUT POWER 11 Gas 2 10 9 8 NF 7 Output Power (dBm) f=12GHz VDS=2V Associated Gain (dB) 12 3 Noise Figure (dB) -0.2V 20 Ambient Temperature (°C) 1 VGS = 0V 30 f=12GHz VDS=2V Gain Matched IDS=15mA 10 Noise Figure Matched IDS=10mA 5 0 0 10 20 Drain Current (mA) 30 -10 -5 0 Input Power (dBm) 2 5 FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips S11 S22 +j50 S21 S12 +90° +j100 +j25 12 +j250 6 +j10 14 22 16 20 18 20 18 22 16 14 810 6 10 8 4 25 10 50Ω 22 201816 20 18 -j10 100 8 141210 22 16 1 0.1 GHZ 1 2 4 2 6 4 2 1 3 0.1 GHZ -j250 4 14 12 10 8 6 -j25 -j100 -j50 FREQUENCY (MHZ) S11 100 500 1000 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 MAG ANG 1.000 .999 .996 .983 .928 .877 .811 .748 .694 .649 .614 .588 .570 -0.9 -4.7 -9.5 -18.8 -37.0 -54.0 -59.3 -84.5 -98.2 -111.1 -123.2 -134.6 -145.4 2 1 1 0.1 GHZ SCALE FOR |S21| .04 .06 .08 S-PARAMETERS VDS = 2V, IDS = 10mA S21 S12 MAG ANG MAG ANG 3.721 3.717 3.705 3.658 3.489 3.255 2.999 2.750 2.521 2.319 2.142 1.988 1.853 179.2 176.0 172.0 164.1 149.0 135.1 122.5 111.2 101.1 92.0 83.5 75.9 68.8 .001 .007 .013 .026 .049 .068 .082 .093 .101 .108 .114 .121 .130 0° .02 SCALE FOR |S12| 0 5 0.1 GHZ 180° -90° 89.5 87.7 86.4 81.0 72.3 66.0 60.3 57.3 55.2 54.6 55.0 56.2 57.8 S22 MAG ANG .606 .605 .604 .598 .576 .547 .516 .485 .457 .432 .410 .391 .373 -0.4 -2.1 -4.2 -8.3 -16.0 -22.9 -28.9 -34.2 -39.1 -43.7 -48.4 -53.2 -58.4 NOTE:* The data includes bonding wires. n: number of wires Gate n=2 (0.3mm length, 20um Dia Au wire) Drain n=2 (0.3mm length, 20um Dia Au wire) Source n=4 (0.3mm length, 20um Dia Au wire) Ga (max) & |S21|2 vs. FREQUENCY NOISE PARAMETERS VDS=2V, IDS=10mA 15 VDS=2V IDS=10mA Freq. (GHz) Ga (max) 2 4 6 8 10 12 14 16 18 20 Gain (dB) 10 |S21|2 5 4 6 8 10 12 20 30 Frequency (GHz) 3 Γopt (MAG) (ANG) 0.80 0.74 0.68 0.63 0.58 0.52 0.47 0.42 0.38 0.33 16 31 46 61 75 89 102 114 126 137 NFmin (dB) Rn/50 0.33 0.35 0.44 0.53 0.63 0.72 0.84 0.97 1.09 1.22 0.50 0.45 0.40 0.30 0.23 0.18 0.14 0.12 0.10 0.09 FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips CHIP OUTLINE 50 90 154 75 350±20 75 (Unit: µm) 75 50 Die Thickness: 100±20µm 90 450±20 For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4