FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS Total Power Dissipation PTot -5 V 57.6 W oC Storage Temperature Tstg -65 to +175 Channel Temperature Tch 175 oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C) Item Symbol Unit Limit Condition ≤10 DC Input Voltage VDS Gate Current IGS RG=50Ω Gate Current IGR RG=50Ω V ≤32.0 ≥-5.6 mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Symbol Test Conditions Limit Typ. 6.0 Max. 9.0 Unit Drain Current IDSS VDS=5V, VGS=0V Min. - Transconductance gm VDS=5V, IDS=3.6A - 5000 - mS Pinch-off Voltage Vp VDS=5V, IDS=300mA -0.5 -1.5 -3.0 V IGS=-340uA Gate-Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Idsr Drain Current Power-added Efficiency ηadd Gain Flatness ∆G Thermal Resistance Channel Temperature Rise VDS=10V f=9.5 - 10.5 GHz IDS=0.5Idss (typ.) Zs=ZL=50Ω ESD - - V 40.5 - dBm 6.0 7.0 - dB - 3.5 4.5 A - 25 - % - - 1.2 Rth Channel to Case - 2.3 2.6 10V X Idsr X Rth - - 80 dB C/W o C o G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level Note:RF-Test is measured with Vgs-Constant Circuit. Class Ⅲ 2000V ~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.2 September 2004 -5.0 39.5 ∆Tch CASE STYLE: IB A 1 FLM0910-12F X-Band Internally Matched FET OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER POWER DERATING CURVE 50 40 60 40 30 20 10 38 50 Pout 36 40 34 30 32 20 30 0 50 100 150 200 28 Case Temperature [degree C] 0 20 22 24 26 28 30 Input power [dBm] OUTPUT POWER vs. INPUT POWER Vds=10V, Ids=0.5IDSS 42 Pin=35dBm 40 Pin=33dBm 38 Pin=30dBm 36 34 Pin=26dBm 32 30 Pin=22dBm 28 9 9.5 10 P.A.E. 0 10 Input power[dBm] 2 10.5 11 P1dB 32 34 36 Power Added Efficiency [%} 70 Output power [dBm] 42 Output power [dBm] Total Power Dissipation [W] Vds=10V, Ids=0.5IDSS 60 FLM0910-12F X-Band Internally Matched FET ■ S-PARAMETER +90° +50j +100j +25j 10.5 9.5G H z 10 +250j 10.5 10 0 9.5G H z 10 ∞ ±180° 4 10.5 0° 9.5GHz 10 10.5 -10j 2 9.5GHz Scale for |S21| -250j 0.2 25 -25j 10Ω -100j -50j Scale for |S 12| +10j 0.4 -90° S 11 S 22 VDS=10V, IDS=0.5Idss Freq [GHz] 9.0 9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 9.9 10 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11 S11 MAG ANG 0.66 133.64 0.62 121.51 0.59 109.11 0.56 96.79 0.54 84.51 0.52 71.65 0.50 59.03 0.48 46.37 0.45 32.92 0.43 19.89 0.40 4.99 0.38 -11.34 0.34 -30.15 0.30 -51.96 0.28 -77.26 0.28 -106.09 0.30 -133.91 0.35 -159.52 0.41 179.35 0.47 162.12 0.53 147.13 S21 MAG 2.54 2.53 2.52 2.51 2.51 2.52 2.54 2.56 2.59 2.61 2.63 2.65 2.65 2.65 2.61 2.57 2.49 2.40 2.28 2.14 2.00 ANG -104.76 -116.04 -127.33 -138.32 -149.10 -160.11 -171.12 177.84 166.32 154.59 142.31 130.18 117.31 104.11 90.66 77.15 63.18 49.45 35.59 21.90 8.89 3 S12 MAG 0.02 0.03 0.03 0.04 0.04 0.05 0.06 0.06 0.07 0.07 0.08 0.08 0.09 0.09 0.09 0.10 0.10 0.09 0.09 0.09 0.08 ANG -117.97 -137.79 -150.61 -165.52 -175.45 173.89 162.66 153.39 141.50 130.54 119.17 107.91 95.66 84.09 70.62 57.05 45.22 31.57 20.35 6.54 -4.01 S22 MAG ANG 0.25 36.41 0.28 30.66 0.30 24.58 0.33 18.45 0.36 13.07 0.37 8.38 0.38 2.25 0.38 -4.55 0.38 -11.38 0.37 -17.87 0.34 -24.57 0.31 -32.73 0.26 -42.86 0.21 -55.55 0.16 -68.18 0.10 -84.69 0.04 -134.34 0.08 134.77 0.14 113.53 0.20 100.70 0.25 85.90 S 12 S 21 FLM0910-12F X-Band Internally Matched FET ■ Package Out Line Case Style : IB Unit : mm PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM0910-12F X-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 5