EUDYNA FLM0910-25F

FLM0910-25F
X-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=44dBm(Typ.)
・High Gain: G1dB=7.0dB(Typ.)
・High PAE: ηadd=30%(Typ.)
・Broad Band: 9.5～10.5GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM0910-25F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃)
Item
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
Total Power Dissipation
PT
93.7
W
Storage Temperature
Tstg
-65 to +175
℃
Channel Temperature
Tch
175
℃
Recommended Operating Condition(Case Temperature Tc=25℃)
Item
Symbol
DC Input Voltage
VDS
Forward Gate Current
IGF
Reverse Gate Current
IGR
Unit
Limit
Condition
≦10
V
RG=25Ω
≦64
mA
RG=25Ω
≧-11.2
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃)
Item
Test Conditions
Symbol
VDS=5V , VGS=0V
Min.
-
Limit
Typ.
10.8
Max.
16.2
10000
-
mS
V
Drain Current
IDSS
Transconductance
gm
VDS=5V , IDS=6.92A
-
Pinch-off Voltage
Vp
VDS=5V , IDS=500mA
-0.5
-1.5
-3.0
Gate-Source Breakdown Voltage
VGSO
IGS=-500uA
-5.0
-
-
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Idsr
Drain Current
Power-added Efficiency
ηadd
Gain Flatness
ΔG
Thermal Resistance
Channel Temperature Rise
VDS=10V
f=9.5 - 10.5 GHz
IDS=0.6Idss
Zs=ZL=50Ω
-
V
dBm
6.0
7.0
-
dB
A
-
6.5
7.2
-
30
-
%
-
-
±0.6
dB
Channel to Case
-
1.4
1.6
℃/W
ΔTch
10V X Idsr X Rth
-
-
100
℃
G.C.P.:Gain Compression Point
Class Ⅲ
2000V　～
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.3
September 2004
44
A
Rth
CASE STYLE: IK
ESD
43
Unit
1
FLM0910-25F
X-Band Internally Matched FET
OUTPUT POWER & POWER ADDED EFFICIENCY
vs. INPUT POWER
POWER DERATING CURVE
Output Power (dBm)
80
60
40
20
46
70
44
60
42
50
40
40
38
30
36
20
34
10
32
0
0
50
100
150
0
24
200
26
28
30
32
34
36
38
Input Pow er (dBm )
Case Temperature [o C]
OUTPUT POWER vs. FREQUENCY
VDS=10V, IDS(DC)=0.60IDSS
46
Pin=39dBm
P1dB
44
Output Power (dBm)
Total Power Dissipation [W]
100
Pin=37dBm
42
Pin=34dBm
40
Pin=30dBm
38
36
34
Pin=26dBm
32
9.2
9.4
9.6
9.8
10
10.2
Frequency (GHz)
2
10.4
10.6
10.8
40
42
Power Added Efficiency (%)
VDS=10V, IDS(DC)=0.60IDSS, f=10.0GHz
FLM0910-25F
X-Band Internally Matched FET
■ S-PARAMETER
+90°
25
10
10.5
10
9.5G H z
10.5
10.5
±180° 3
9.5G H z
2
Scale for |S21|
10.5
0°
9.5GHz
Scale for |S 12|
10
10
9.5GHz
0.2
-90°
S 11
S 22
S 12
S 21
VDS=10V , IDS=0.6Idss
S 11
F req
S 21
S 12
S 22
[G H z]
M AG
ANG
M AG
ANG
M AG
ANG
M AG
ANG
9
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
11
0.71
0.65
0.59
0.53
0.47
0.42
0.39
0.37
0.37
0.38
0.40
0.41
0.43
0.44
0.44
0.44
0.43
0.42
0.40
0.37
0.34
-88.02
-103.53
-120.18
-138.00
-156.97
-177.22
161.48
138.88
116.07
93.62
72.47
52.59
33.84
16.24
-0.56
-17.05
-33.47
-50.45
-68.63
-89.03
-113.11
2.15
2.29
2.40
2.47
2.51
2.53
2.56
2.59
2.62
2.63
2.64
2.62
2.60
2.57
2.53
2.50
2.47
2.44
2.43
2.43
2.42
35.09
18.28
1.32
-15.34
-31.59
-47.33
-62.74
-78.13
-93.65
-109.43
-125.14
-140.95
-156.81
-172.15
172.43
156.88
141.58
126.23
110.45
94.22
77.32
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.08
15.25
-1.55
-17.77
-34.01
-49.64
-64.58
-79.62
-94.61
-109.43
-124.61
-140.33
-155.72
-172.24
171.03
154.60
137.92
120.72
103.61
85.80
68.12
50.38
0.26
0.22
0.21
0.22
0.24
0.26
0.29
0.30
0.31
0.32
0.32
0.32
0.32
0.32
0.33
0.33
0.33
0.33
0.32
0.30
0.27
-77.71
-107.05
-138.65
-167.56
168.82
149.54
133.93
120.00
107.27
95.51
84.23
73.93
63.61
54.33
44.93
35.26
25.29
15.68
6.13
-2.58
-9.87
3
FLM0910-25F
X-Band Internally Matched FET
■ Package Out Line
CASE STYLE : IK
Unit : mm
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
4
FLM0910-25F
X-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama,244-0845,Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
5