HUASHAN HP147TSW

PNP DARLINGTON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HP147TSW
█　APPLICATIONS　High DC Current Gain　█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-263
T stg ——Storage Temperature………………………… －55~150℃
T j ——Junction Temperature……………………………… 150℃　PC——Collector Dissipation（T c=25℃）…………………… 70W
VCBO ——Collector-Base Voltage………………………… -100V
VCEO ——Collector-Emitter Voltage……………………… -100V
1―Base，B
VEBO ——Emitter-Base Voltage……………………………… -5V
2―Collector，C
3―Emitter, E
IC——Collector Current（DC）……………………………… -8A
IB——Base Current…………………………………………-0.5A
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol　BVCEO(SUS)
Characteristics　Collector-Emitter Sustaining Voltage
Min　Typ　Max　Unit －１００　Ｖ　Test Conditions IC=-30mA, IB=0　ICEO
Collector Cutoff Current
－２　ICBO
Collector Cutoff Current
－１　IEBO　Emitter-Base Cutoff Current　－２　１０００　１０００　VCE=-4V, IC=-3A
－２　Ｖ　IC=-5A, IB=-10mA　－３　Ｖ　IC=-10A, IB=-40mA
Ｖ　IC=-10A, IB=-40mA　HFE（1）　DC Current Gain　HFE（2）
VCE(sat1)　Collector- Emitter Saturation Voltage　VCE(sat2)
VBE(sat)　Base- Emitter Saturation Voltage　－３．５　VBE(on)
Base- Emitter On Vo ltage
０．１５　－３　ｍＡ　VCE=-50V, IB=0
ｍＡ　VCB=-100V, IE=0
ｍＡ　VEB=-5V, IC=0　VCE=-4V, IC=-0.5A　tD
Deiay time
tR
Rise Time
０．５５　tS
Storage Time
２．５　Ｖ　VCE=-4V,IC=-10A,　ｕＳ　Vcc=-30V,Ic=-5A
ｕＳ　IB1=-20mA
ｕＳ　IB2=20mA
tF
Fall Time
２．５　ｕＳ　Shantou Huashan Electronic Devices Co.,Ltd.
PNP DARLINGTON TRANSISTOR
HP147TSW