IC IC SMD Type P-Channel 2.5V Specified PowerTrench MOSFET KDS6375 Features -8 A, -20 V. RDS(ON) = 24m @ VGS = -4.5 V RDS(ON) = 32m @ VGS =-2.5V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS -20 V Gate to Source Voltage VGS 8 V Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) A -50 A 2.5 PD Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature -8 1.2 W 1 TJ, TSTG -55 to 175 Thermal Resistance Junction to Ambient (Note 1a) R JA 50 /W Thermal Resistance Junction to Ambient (Note 1c) R JA 125 /W Thermal Resistance Junction to Case (Note 1) R JC 25 /W www.kexin.com.cn 1 IC IC SMD Type KDS6375 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol BVDSS Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = -250 ID = -250 IDSS VDS = -16 V, VGS = 0 V Gate-Body Leakage, Forward IGSSF VGS = 8V, VDS = 0 V Gate-Body Leakage, Reverse IGSSR VGS = -8 V, VDS = 0 V Gate Threshold Voltage(Not 2) VGS(th) VDS = VGS, ID = -250 Static Drain-Source On-Resistance(Not 2) On-State Drain Current ID = -250 RDS(on) ID(on) Forward Transconductance gFS Input Capacitance Ciss A Min Typ Max -20 Unit V -13 A, Referenced to 25 Zero Gate Voltage Drain Current Gate Threshold Voltage Temperature Coefficient(Not 2) mV/ -1 A -0.4 -0.7 100 nA -100 nA -1.5 V 3 A, Referenced to 25 mV/ VGS = -4.5 V, ID =-8 A 14 24 VGS = -2.5 V, ID = -7 A 19 32 VGS = -4.5 V, ID =-8 A,TJ = 125 18 39 VGS = -4.5 V, VDS = -5V VDS = -5 V, ID = -8A VDS = -10 V, VGS = 0 V,f = 1.0 MHz A -50 m A 35 S 2694 pF Output Capacitance Coss 480 pF Reverse Transfer Capacitance Crss 229 pF Turn-On Delay Time td(on) 12 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Drain-Source Diode Forward Voltage www.kexin.com.cn VDD = -10 V, ID = -1 A,VGS = -4.5 V, RGEN = 6 (Note 2) tf Total Gate Charge Maximum Continuous Drain-Source Diode Forward Current 2 Testconditons VDS = -10 V, ID =-8 A,VGS=-4.5V(Note 2) VGS = 0 V, IS = -2.1A (Not 2) ns 9 17 ns 124 197 ns 57 92 ns 26 36 nC 5 nC 6 nC IS VSD 22 -0.7 -2.1 A -1.2 V