FAIRCHILD KSE13007F

KSE13007F
KSE13007F
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector- Base Voltage
Parameter
Value
700
Units
V
V CEO
Collector- Emitter Voltage
VEBO
Emitter- Base Voltage
400
V
9
IC
Collector Current (DC)
8
V
A
ICP
Collector Current (Pulse)
16
A
IB
Base Current
PC
Collector Dissipation (TC=25°C)
TJ
TSTG
4
A
40
W
Junction Temperature
150
°C
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 10mA, IB = 0
Min.
400
Typ.
Max.
Units
V
1
mA
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
hFE
DC Current Gain
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
1
2
3
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
1.2
1.6
V
V
Cob
Output Capacitance
VCB = 10V , f = 0.1MHz
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
VCC =125V, IC = 5A
IB1 = - IB2 = 1A
RL = 50Ω
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
8
5
60
30
110
pF
4
MHz
1.6
µs
3
µs
0.7
µs
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002
KSE13007F
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
100
hFE, DC CURRENT GAIN
VCE = 5V
10
1
0.1
1
10
10
IC = 3 IB
1
VBE(sat)
0.01
0.1
IC[A], COLLECTOR CURRENT
10
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
tR, tD [µ s], TURN ON TIME
1000
Cob[pF], CAPACITANCE
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
100
10
tR
100
tD, V BE(off)=5V
VCC =125V
IC =5IB
1
0.1
1
10
100
10
0.1
1000
VCB[V], COLLECTOR-BASE VOLTAGE
1
10
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10000
100
VCC =125V
IC =5IB
100
tF
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
©2002 Fairchild Semiconductor Corporation
10
10
µs
10 s
0µ
10
IC[A], COLLECTOR CURRENT
tSTG
1000
DC
s
1m
tSTG, tF [µs], TURN OFF TIME
V CE(sat)
0.1
1
0.1
0.01
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A2, June 2002
KSE13007F
Typical Characteristics (Continued)
60
PC[W], POWER DISSIPATION
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002
KSE13007F
Package Demensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H7