NTE316 Silicon NPN Transistor High Gain, Low Noise Amp Features: D High Current Gain–Bandwidth Product D Low Noise Figure D High Power Gain Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Continuous Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0 15 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 30 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 3.5 – – V nA Collector Cutoff Current ICBO VCB = 5V, IE = 0 – – 10 hFE VCE = 5V, IC = 2mA 25 – 250 1400 – – MHz pF ON Characteristics DC Current Gain Dynamic Characteristics Current Gain–Bandwidth Product fT VCE = 5V, IC = 10mA, f = 100MHz Collector–Base Capacitance Ccb VCB = 10V, IE = 0, f = 1kHz – 0.8 1.0 Small–Signal Current Gain hfe VCE = 5V, IC = 2mA, f = 1kHz 25 – 250 VCE = 5V, IE = 2mA, f = 31.8MHz 2 – 12 ps NF VCE = 5V, IC = 2mA, RS = 50Ω, f = 450MHz – – 4.5 dB Gpe VCE = 5V, IC = 2mA, f = 450MHz 15 – – dB Collector–Base Time Constant Noise Figure rb ’Cc Functional Test Common–Emitter Amplifier Power Gain .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector 45° Case .040 (1.02)