CHENMKO 2SC2411KPT

CHENMKO ENTERPRISE CO.,LTD
2SC2411KPT
SURFACE MOUNT
Medium Power NPN Transistor
VOLTAGE 32 Volts
CURRENT 0.5 Ampere
APPLICATION
* Medium Power Amplifier .
FEATURE
* Surface mount package. (SOT-23)
* Low saturation voltage V
* Low cob. Cob=6.0pF(Typ.)
CE(sat)=0.4V(max.)(I C=500mA)
.019 (0.50)
* PC= 200mW (mounted on ceramic substrate).
* High saturation current capability.
(1)
.066 (1.70)
* NPN Silicon Transistor
* Epitaxial planner type
.110 (2.80)
.082 (2.10)
.119 (3.04)
CONSTRUCTION
.018 (0.30)
.041 (1.05)
.033 (0.85)
SOT-23
(3)
(2)
MARKING
.045 (1.15)
.033 (0.85)
CIRCUIT
(1) B
.002 (0.05)
C (3)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.055 (1.40)
.047 (1.20)
* HFE(P):PT
* HFE(Q):NC
* HFE(R):1P-
SOT-23
Dimensions in inches and (millimeters)
E (2)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
40
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
32
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
5
Volts
IC
-
500
mAmps
Peak Collector Current
ICM
-
500
mAmps
Peak Base Current
IBM
-
10
mAmps
PTOT
-
350
mW
TSTG
-55
+150
o
C
C
C
Collector Current DC
Total Power Dissipation
TA ≤ 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TJ
-
+150
o
TAMB
-55
+150
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2002-10
RATING CHARACTERISTICS ( 2SC2411KPT )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYPE
MAX.
UNITS
Collector Cut-off Current
PARAMETERS
IE=0; VCB=20V
CONDITION
ICBO
-
-
1.0
uA
Emitter Cut-off Current
IC=0; VEB=4V
ICEO
-
-
1.0
uA
DC Current Gain
VCE=3V; Note 1
IC=100mA; Note 2
hFE
82
-
390
Collector-Emitter Saturation Voltage
IC=500mA; IB=50mA
VCEsat
-
-
0.4
Volts
Base-Emitter Saturatio Voltage
IC=500mA; IB=50mA
VBEsat
-
-
1.1
Volts
Output Collector Capacitance
IE=ie=0; VCB=12V;
f=1MHz
Cob
-
6.0
-
pF
Transition Frequency
IC=20mA; VCE=5V;
f=100MHz
fT
-
250
-
MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390
RATING CHARACTERISTIC CURVES ( 2SC2411KPT )
Fig.2
Grounded emitter propagation
characteristics
1000
100
VCE=6V
COLLECTOR CURRENT : IC(mA)
COLLECTOR CURRENT : IC(mA)
500
200
100
Ta=100OC
50
25OC
80OC
25OC
20
10
- 55OC
5
2
1
0.5
Grounded emitter output
characteristics (1)
Ta=25OC
0.50
mA
A
0.45m
A
0.40m
0.35mA
0.30mA
0.25mA
50
0.20mA
0.15mA
0.10mA
0.05mA
Fig.3
Grounded emitter output
characteristics (2)
500
COLLECTOR CURRENT : IC(mA)
Fig.1
Ta=25OC
2mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
400
300
0.8mA
200
0.6mA
0.4mA
100
0.2mA
0.2
0.1
0.2
0.3
0.4
0.5
0.6
0.7 0.8
0.9
1.0
1.1
BASE TO EMITTER VOLTAGE : VBE(V)
IB=0A
0
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
0
0
IB=0A
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
RATING CHARACTERISTIC CURVES ( 2SC2411KPT )
1000
Ta=25OC
lC/lB=10
VCE=3V
500
0.5
0.2
0.1
0.05
O
C
Ta=100
O
75 C
O
50 C
O
100
25 C
O
0C
OC
50
- 25O
C
- 50
200
20
0.02
0.5
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : IC(mA)
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
Fig.7
Ta=25OC
f=1MHz
IE=0A
IC=0A
Cib
20
Co
10
b
5
2
0.5
1
2
5
10
20
0.5 1
2
5 10 20
50 100 200 5001000
COLLECTOR CURRENT : IC(mA)
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
50
10
0.1 0.2
50
COLLECTOR TO BASE VOLTAGE : VCB(V)
EMITTER TO BASE VOLTAGE
: VEB(V)
Fig. 6 Gain bandwidth product
vs. emitter current
500
TRANSITION FREQUENCY : fT(MHz)
1
Fig.5 DC current gain vs.
collector current
DC CURRENT GAIN : hFE
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Ta=25OC
VCE=5V
200
100
50
0.5
1
2
5
10
20
EMITTER CURRENT : IE(mA)
50