PHILIPS PBSS4140V

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS4140V
40 V low VCEsat NPN transistor
Product specification
Supersedes data of 2001 Nov 05
2002 Jun 20
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140V
FEATURES
QUICK REFERENCE DATA
• 300 mW total power dissipation
SYMBOL
• Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin
package
VCEO
collector-emitter voltage
40
V
IC
collector current (DC)
1
A
ICRP
peak collector current
2
A
RCEsat
equivalent on-resistance
<190
mΩ
• Improved thermal behaviour due to flat leads
• Excellent coplanarity due to straight leads
• Low collector-emitter saturation voltage
• High current capabilities
PARAMETER
MAX.
UNIT
PINNING
• Reduced required PCB area.
PIN
APPLICATIONS
DESCRIPTION
1
collector
2
collector
• General purpose switching and muting
3
base
• LCD backlighting
4
emitter
• Supply line switching circuits
5
collector
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
6
collector
DESCRIPTION
handbook, halfpage
NPN low VCEsat transistor with high current capability in a
SOT666 plastic package. PNP complement: PBSS5140V.
6
5
4
1, 2, 5, 6
3
MARKING
TYPE NUMBER
PBSS4140V
4
MARKING CODE
1
22
Top view
Fig.1
2002 Jun 20
2
2
3
MAM444
Simplified outline (SOT666) and symbol.
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
3
A
ICRP
repetitive peak collector current
−
2
A
IB
base current (DC)
−
300
mA
IBM
peak base current
−
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
−
300
mW
Tamb ≤ 25 °C; note 3
−
500
mW
Tamb ≤ 25 °C; notes 1 and 2
−
1.2
W
note 1
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions: tp ≤ 30 ms; δ ≤ 0.2.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
note 1
410
K/W
note 2
215
K/W
notes 1 and 3
110
K/W
Notes
1. Device mounted on a printed circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Operated under pulsed conditions: tp ≤ 30 ms; δ ≤ 0.2.
Soldering
The only recommended soldering method is reflow soldering.
2002 Jun 20
3
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140V
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = 40 V; IE = 0
−
−
100
nA
VCB = 40 V; IE = 0; Tamb = 150 °C
−
−
50
µA
VCE = 30 V; IB = 0
−
−
100
nA
nA
ICEO
collector-emitter cut-off current
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
hFE
DC current gain
VCE = 5 V; IC = 1 mA
300
−
−
VCE = 5 V; IC = 500 mA
300
−
900
VCE = 5 V; IC = 1 A
200
−
−
VCE = 5 V; IC = 2 A; note 1
75
−
−
−
50
80
mV
IC = 500 mA; IB = 50 mA
−
70
110
mV
IC = 1 A; IB = 100 mA; note 1
−
150
190
mV
IC = 2 A; IB = 200 mA; note 1
−
320
440
mV
−
150
<190
mΩ
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 1 mA
RCEsat
equivalent on-resistance
IC = 1 A; IB = 100 mA; note 1
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
−
−
1.2
V
VBEon
base-emitter turn-on voltage
VCE = 5 V; IC = 1 A
−
−
1.1
V
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
10
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2002 Jun 20
4
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140V
MLD746
1000
MLD747
10
handbook, halfpage
handbook, halfpage
hFE
800
VBE
(1)
(V)
600
(2)
(1)
1
400
(2)
(3)
(3)
200
0
−10−1
−1
−10
−102
10−1
10−1
−103
−104
IC (mA)
1
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD748
103
handbook, halfpage
103
104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MLD749
102
handbook, halfpage
VCEsat
RCEsat
(mV)
(Ω)
102
102
10
10
(1)
(2)
(3)
10
1
(1)
(2)
(3)
1
10−1
1
10
102
IC (mA)
10−1
10−1
103
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2002 Jun 20
5
1
10
102
IC (mA)
103
Equivalent on-resistance as a function of
collector current; typical values.
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140V
MLD750
400
handbook, halfpage
fT
(MHz)
300
200
100
0
0
200
400
600
1000
800
IC (mA)
VCE = 10 V.
Fig.6
Transition frequency as a function of
collector current.
2002 Jun 20
6
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140V
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2002 Jun 20
EUROPEAN
PROJECTION
7
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140V
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Jun 20
8
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140V
NOTES
2002 Jun 20
9
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140V
NOTES
2002 Jun 20
10
Philips Semiconductors
Product specification
40 V low VCEsat NPN transistor
PBSS4140V
NOTES
2002 Jun 20
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp12
Date of release: 2002
Jun 20
Document order number:
9397 750 09428