Product specification 2SD965-Q SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 ■ Features ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with 3.00±0.1 0.80±0.1 0.53±0.1 0.44±0.1 2.60±0.1 0.48±0.1 3 2 0.40±0.1 1 the low-voltage power supply. 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA. IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 7 V Collector Cut-off Current ICBO VCB=10V, IE=0 0.1 μA Emitter Cut-off Current IEBO VEB = 7V, IC = 0 0.1 μA DC current gain hFE Collector-emitter saturation voltage Collector output capacitance Transition frequency VCE(sat) Cob fT VCE = 2 V, IC = 0.5 A 230 VCE = 2 V, IC = 2A 150 380 IC = 2A, IB = 0.1 A 1 VCB = 20 V, IE = 0, f = 1 MHz VCB = 6 V, IC = 50mA 50 150 V pF MHz ■ Marking Marking D965Q http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 2SD965-Q ■ Electrical Characteristics Curves http://www.twtysemi.com [email protected] 4008-318-123 2 of 2