MOSFET SMD Type P-Channel MOS FET For High-Speed Switching 2SJ181S TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 No secondary breakdown Suitable for switching regulator and DC-DC converter 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 Low drive current +0.15 0.50-0.15 3.80 +0.2 9.70-0.2 High speed switching +0.15 5.55-0.15 Low on-resistance 1Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Symbol Rating Unit VDSS -600 V Gate to source voltage VGSS 15 V Drain current ID(DS) -0.5 A ID(pulse) -1 A W Drain peak current * Pch 20 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Channel dissipation (Tc=25 * PW 10 ìs, duty cycle ) 1% www.kexin.com.cn 1 MOSFET SMD Type 2SJ181S Electrical Characteristics Ta = 25 Parameter Testconditons Min Typ Max Unit VDSS ID = -10 mA, VGS = 0 Gate to source breakdown voltage VGSS IG = Gate to source leak current IGSS VGS = 12 V, VDS = 0 10 µA Zero gate voltage drain current IDSS VDS = -500 V, VGS = 0 -100 µA -4 V 100 A, VDS = 0 Gate to source cutoff voltage VGS(off) ID = -1 mA, VDS = -10 V Static Drain to source on stateresistance RDS(on) ID = -0.3 A, VGS = -10 V Forward transfer admittance |yfs| ID = -0.3 A, VDS = -20 V Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time 2 Symbol Drain to source breakdown voltage www.kexin.com.cn tr -600 V 15 V -2 15 0.3 ID = -0.3 A, VGS = -10 V, S 220 pF 55 pF 13 pF 7 ns 20 ns td(off) 35 ns tf 35 ns VDF trr RL = 100 Ù 25 0.45 IF = -0.5 A, VGS = 0 IF = -0.5 A, VGS = 0, diF/dt = 50 A/ s -0.85 V 230 ns