ETC 2SK2885(L)|2SK2885(S)

2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-545A (Z)
2nd. Edition
Sep. 1997
Features
• Low on-resistance
R DS(on) = 10mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
LDPAK
4
4
D
1
1
G
S
2
3
2
3
1. Gate
2. Drain
3. Source
4. Drain
2SK2885(L), 2SK2885(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
45
A
180
A
45
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2
2SK2885(L), 2SK2885(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Gate to source cutoff voltage VGS(off)
1.0
—
2.0
V
I D = 1mA, VDS = 10V
Static drain to source on state RDS(on)
—
10
14
mΩ
I D = 20A, VGS = 10V*1
resistance
RDS(on)
—
15
25
mΩ
I D = 20A, VGS = 4V*1
Forward transfer admittance
|yfs|
20
30
—
S
I D = 20A, VDS = 10V*1
Input capacitance
Ciss
—
1570
—
pF
VDS = 10V
Output capacitance
Coss
—
1100
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
410
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
32
—
ns
VGS = 10V, ID = 20A
Rise time
tr
—
300
—
ns
RL = 0.5Ω
Turn-off delay time
t d(off)
—
180
—
ns
Fall time
tf
—
200
—
ns
Body to drain diode forward
voltage
VDF
—
1.0
—
V
I F = 45A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
75
—
ns
I F = 45A, VGS = 0
diF/ dt = 50A/µs
Note:
1. Pulse test
See characteristics curves of 2SK2737
3
2SK2885(L), 2SK2885(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
I D (A)
75
Drain Current
Channel Dissipation
Pch (W)
100
50
25
0
50
100
Case Temperature
150
Tc (°C)
200
10 µs
300
100
10
30
DC
1
0µ
m
s
s
=
Op 10
m
e
(T rat s
c = io
n
25
°C
)
10
3
PW
1
Operation in
this area is
limited by R DS(on)
0.3 Ta = 25°C
1 shot pulse
0.1
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V DS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.01
10 µ
4
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.67 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
ho
1s
100 µ
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
2SK2885(L), 2SK2885(S)
Switching Time Test Circuit
Switching Time Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
5
2SK2885(L), 2SK2885(S)
Package Dimensions
As of January, 2001
Unit: mm
2.54 ± 0.5
(1.4)
2.54 ± 0.5
11.3 ± 0.5
10.0
1.27 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
11.0 ± 0.5
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.59 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
6
LDPAK (L)
—
—
1.4 g
2SK2885(L), 2SK2885(S)
As of January, 2001
Unit: mm
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
3.0 +– 0.5
1.27 ± 0.2
1.2 ± 0.2
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.15
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
LDPAK (S)-(1)
—
—
1.3 g
7
2SK2885(L), 2SK2885(S)
As of January, 2001
Unit: mm
(1.5)
7.8
7.0
1.7
7.8
6.6
1.3 ± 0.2
0.3
10.0 +– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.2 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.3
5.0 +– 0.5
1.27 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
8
LDPAK (S)-(2)
—
—
1.35 g
2SK2885(L), 2SK2885(S)
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9