IC MOSFET SMD Type Product specification 2SK3025 Features TO-252 Avalanche energy capacity guaranteed High-speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low ON-resistance +0.1 0.60-0.1 2.3 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 High electrostatic breakdown voltage +0.28 1.50-0.1 +0.2 9.70-0.2 Low-voltage drive +0.15 0.50-0.15 No secondary breakdown 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V ID 30 A Idp * 60 A Drain current Power dissipation TC=25 20 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Symbol Testconditons VDSS ID=1mA,VGS=0 Min Drain cut-off current IDSS VDS=50V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 Gate threshold voltage Vth VDS=10V,ID=1mA 1 Forward transfer admittance Yfs VDS=10V,ID=15A 9 Drain to source on-state resistance RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Typ Max 60 Unit V 10 A 10 2.5 18 A V S VGS=10V,ID=15A 25 40 m VGS=4V,ID=15A 35 55 m 1200 pF 400 pF Crss 200 pF VDS=10V,VGS=0,f=1MHZ Turn-on delay time ton 10 ns Rise time tr 20 ns Turn-off delay time toff 350 ns Fall time tf 140 ns http://www.twtysemi.com ID=15A,VGS(on)=10V,RL=2 ,VDD=30V [email protected] 4008-318-123 1 of 1