DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3054 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING ORDERING INFORMATION DESCRIPTION The 2SK3054 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3054 has excellent switching characteristics, PART NUMBER PACKAGE 2SK3054 SC-70 and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate cut-off voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS= 0 V) VDSS 50 V Gate to Source Voltage (VDS= 0 V) VGSS ±7 V ID(DC) ±0.1 A ID(pulse) ±0.2 A Total Power Dissipation PT 150 mW Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (DC) Drain Current (pulse) Note Note PW ≤ 10 ms, Duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14209EJ2V0DS00 (2nd edition) Date Published March 2000 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999 2SK3054 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = 50 V, VGS = 0 V 1 µA Gate Leakage Current IGSS VGS = ±7 V, VDS = 0 V ±5 µA 1.5 V Gate to Source Cut-off Voltage VGS(off) Forward Transfer Admittance | yfs | Drain to Source On-state Resistance VDS = 3 V, ID = 1 µA 0.9 1.2 VDS = 3 V, ID = 10 mA 20 38 mS RDS(on)1 VGS = 2.5 V, ID = 10 mA 22 40 Ω RDS(on)2 VGS = 4.0 V, ID = 10 mA 14 20 Ω Input Capacitance Ciss VDS = 3 V 8 pF Output Capacitance Coss VGS = 0 V 7 pF Reverse Transfer Capacitance Crss f = 1 MHz 3 pF Turn-on Delay Time t d(on) VDD = 3 V 15 ns tr ID = 20 mA 100 ns td(off) VGS(on) = 3 V 30 ns RG = 10 Ω, RL = 150 Ω 35 ns Rise Time Turn-off Delay Time Fall Time tf TEST CIRCUIT SWITCHING TIME D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 90 % VDD 90 % ID 90 % ID VGS 0 ID 10 % 0 10 % Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % 2 VGS(on) 10 % tr td(on) ton td(off) tf toff Data Sheet D14209EJ2V0DS00 2SK3054 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 20 40 60 80 300 250 200 150 100 50 0 100 120 140 160 30 TA - Ambient Temperature - ˚C 60 90 120 150 180 TA - Ambient Temperature - ˚C FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - mA Pulsed 80 VGS = 4.5 V 60 VGS = 4.0 V VGS = 2.5 V 40 20 0 1.0 0.5 10 TA = 150 ˚C 75 ˚C 25 ˚C −25 ˚C 1 0.1 2.0 1.5 VDS = 3 V 0.01 VDS - Drain to Source Voltage - V 0 1 2 3 4 5 6 7 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 3 V ID = 1 µA 1.5 ★ 1.0 | yfs | - Forward Transfer Admittance - mS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 2.0 VGS(off) - Gate to Source Cut-off Voltage - V ★ ID - Drain Current - mA 100 Pulsed 100 VDS = 5 V f = 1 kHz 200 100 10 1 10 100 200 ID - Drain Current - mA 0.5 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D14209EJ2V0DS00 3 RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 ★ ID = 100 mA ID = 10 mA 10 0 1 2 3 4 5 6 7 8 9 RDS(on) - Drain to Source On-state Resistance - Ω 2SK3054 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed VGS = 2.5 V VGS = 4.0 V 10 1 0.1 1 10 100 ID - Drain Current - mA 10 25 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = 2.5 V ID = 5 mA 20 15 10 0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω VGS - Gate to Source Voltage - V 100 50 150 30 VGS = 4.0 V ID = 5 mA 25 20 15 0 Tch - Channel Temperature - ˚C SWITCHING CHARACTERISTICS Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz Ciss Coss Crss td(on), tr, td(off), tf - Switching Time - ns 1 000 100 tr 100 tf td(off) td(on) 10 1 1 10 100 1 1 10 VDD = 3 V VGS = 3 V RGS = 10 Ω 1000 100 ID - Drain Current - mA VDS - Drain to Source Voltage - V 4 150 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 100 50 Data Sheet D14209EJ2V0DS00 2SK3054 ISD - Diode Forward Current - mA SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed VGS = 0 V 10 1 0.1 0.5 0.6 0.7 0.8 0.9 1.0 VSD - Source to Drain Voltage - V Data Sheet D14209EJ2V0DS00 5 2SK3054 PACKAGE DRAWING (Unit: mm) SC-70 2.1±0.1 2 Electrode Connection 3 1 0.3 +0.1 −0 0.65 0.65 0.3 +0.1 −0 2.0±0.2 1.25±0.1 EQUIVALENT CIRCUIT 1. Source 2. Gate 3. Drain Drain Body Diode Gate Gate Protection Source Diode 0.15 +0.1 −0.05 0.9±0.1 0.3 Marking 0 to 0.1 Marking : G25 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D14209EJ2V0DS00 2SK3054 [MEMO] Data Sheet D14209EJ2V0DS00 7 2SK3054 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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