2SK3376TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation (Ta = 25°C) PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range Note: 0.4 0.4 2 0.3±0.05 3 Unit Gate Current Junction Temperature 1 0.09±0.03 Gate-Drain voltage Symbol 0.8±0.05 0.28±0.02 Characteristic 1.2±0.05 Absolute Maximum Ratings (Ta=25°C) 0.8±0.1 0.2±0.05 • Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1.Drain 2.Source 3.Gate VESM2 JEDEC - JEITA - TOSHIBA 2-1H1A Weight: 0.8mg (typ.) IDSS CLASSIFICATION A-Rank 80 to 200µA B-Rank 170 to 300µA C-Rank 270 to 480µA BK-Rank 150 to 350µA Marking 3 □ Equivalent Circuit D Type Name Top Gate Lot Code IDSS Classification Symbol A :A-Rank B :B-Rank , BK-Rank C :C-Rank G S Precaution There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use it as a terminal. 1 2007-11-01 2SK3376TV Electrical Characteristics (A-Rank IDSS Ta=25°C) Characteristic Symbol Min Typ. Max Unit VDS = 2 V, VGS = 0 80 ⎯ 200 µA VDD = 2 V, RL= 2kΩ,Cg = 3pF ⎯ ⎯ 240 µA VGS(OFF) VDS = 2 V, ID = 1μA -0.1 ⎯ -0.8 V Drain Current IDSS Drain Current ID Gate-Source Cut-off Voltage Test Condition Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V 0.7 1.4 ⎯ mS Input capacitance Ciss VDS = 2 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF Voltage Gain Gv VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz -13.5 ⎯ -9.0 dB ⎯ ⎯ -2.0 dB ⎯ ⎯ -4.0 dB ⎯ ⎯ 47 Min Typ. Max Unit 170 ⎯ 300 µA VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz Delta Voltage Gain DGv(f) Delta Voltage Gain DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz Noise Voltage VN VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve Filter mV Electrical Characteristics (B-Rank IDSS Ta=25°C) Characteristic Drain Current Drain Current Gate-Source Cut-off Voltage Symbol IDSS ID Test Condition VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2kΩ,Cg = 3pF VGS(OFF) VDS = 2 V, ID = 1μA ⎯ ⎯ 340 µA -0.15 ⎯ -1.0 V Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V 0.7 1.4 ⎯ mS Input capacitance Ciss VDS = 2 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF Voltage Gain Gv VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz -11.5 ⎯ -8.0 dB ⎯ ⎯ -2.0 dB ⎯ ⎯ -7.0 dB ⎯ ⎯ 50 Min Typ. Max Unit 270 ⎯ 480 µA ⎯ ⎯ 520 µA VGS(OFF) VDS = 2 V, ID = 1μA -0.2 ⎯ -1.2 V VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz Delta Voltage Gain DGv(f) Delta Voltage Gain DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz Noise Voltage VN VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve Filter mV Electrical Characteristics (C-Rank IDSS Ta=25°C) Characteristic Symbol Drain Current IDSS Drain Current ID Gate-Source Cut-off Voltage Test Condition VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2kΩ,Cg = 3pF Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V 0.7 1.4 ⎯ mS Input capacitance Ciss VDS = 2 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF Voltage Gain Gv VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz -10.5 ⎯ -6.75 dB ⎯ ⎯ -2.0 dB ⎯ ⎯ -20 dB ⎯ ⎯ 75 VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz Delta Voltage Gain DGv(f) Delta Voltage Gain DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz Noise Voltage VN VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve Filter 2 mV 2007-11-01 2SK3376TV Electrical Characteristics (BK-Rank IDSS Ta=25°C) Characteristic Symbol Drain Current IDSS Drain Current ID Gate-Source Cut-off Voltage Test Condition VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2kΩ,Cg = 3pF VGS(OFF) VDS = 2 V, ID = 1μA Min Typ. Max Unit 150 ⎯ 350 µA ⎯ ⎯ 390 µA -0.125 ⎯ -1.1 V Forward transfer admittance |Yfs| VDS = 2 V,VGS = 0V 0.7 1.4 ⎯ mS Input capacitance Ciss VDS = 2 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF Voltage Gain Gv VDD = 2V, RL= 2kΩ,Cg = 3pF, f = 1kHz -12.0 ⎯ -7.50 dB ⎯ ⎯ -2.0 dB ⎯ ⎯ -13.5 dB ⎯ ⎯ 65 VDD = 2V, RL= 2kΩ,Cg = 3pF,f = 1kHz to 100Hz Delta Voltage Gain DGv(f) Delta Voltage Gain DGv(V) VDD = 2V to 1V, RL= 2kΩ,Cg = 3pF,f = 1kHz Noise Voltage VN VDD = 2V, RL= 1kΩ,Cg = 3pF,Gv=80dB,f=A-Curve Filter 3 mV 2007-11-01 2SK3376TV ID – VDS ID – VGS 600 600 VDS=2V Common Source Ta = 25 °C (µA) 500 IDSS=200μA ID (µA) 400 + 0.1 V 300 Drain Current Drain Current 500 ID Common Source Ta = 25 °C + 0.05 V VGS = 0 V 200 – 0.05 V – 0.1 V 1.0 0 Forward transfer admittance |Yfs| (mS) Gate-Source Cut-off Voltage VGS(OFF) (V ) Common Source Ta = 25 °C 300 Drain Current 400 IDSS 500 -200 VGS(OFF):VDS=2V ID = 1μA IDSS:VDS=2V VGS=0V Common Source Ta = 25 °C -100 0 (dB) DGv(V) –3 Delta Voltage Gain Voltage Gain Gv (dB) Gv:VDD=2V Cg=5pF RL= 2.2kΩ, f=1kHz vin=100mV IDSS: VDS=2V VGS=0V Common Source Ta = 25°C –4 300 Drain Current 200 300 400 IDSS 500 600 500 600 (µA) DGv(V)– IDSS -3.0 –2 200 100 Drain Current DGv:VDD=2V to 1.5V Cg=5pF RL= 2.2kΩ, f=1kHz vin=100mV -2.5 –1 100 VGS (V) -300 (µA) Gv– IDSS 0 0 -400 0 600 0 –5 -0.2 VGS(OFF) – IDSS |Yfs|:VDS=2V VGS=0V IDSS: VDS=2V VGS=0V 200 -0.4 -0.6 -500 2 100 -0.8 Gate - Source voltage |Yfs| – IDSS 0 100μA VGS (V) 3 1 200μA 200 0 -1.0 2.0 Drain - Source voltage 300μA 300 100 100 0 IDSS=450μA 400 400 IDSS 500 -1.5 -1.0 -0.5 0 600 IDSS: VDS=2V VGS=0V Common Source Ta = 25°C -2.0 0 100 200 300 Drain Current (µA) 4 400 IDSS (µA) 2007-11-01 2SK3376TV VN – IDSS VN 40 30 THD– IDSS 2.0 VN:VDD=2V Cg=10pF RL= 1kΩ f=1kHz 80dB AMP A-Curve Filter IDSS: VDS=2V VGS=0V Common Source Ta = 25°C Total Harmonic Distortion THD (%) (mV) 50 Noise Voltage 60 20 10 0 THD:VDD=2V Cg=5pF RL= 2.2kΩ f=1kHz vin=50mV IDSS: VDS=2V VGS=0V Common Source Ta = 25°C 1.5 1.0 0.5 0 0 100 200 300 Drain Current 400 IDSS 500 0 600 (µA) 100 200 300 Drain Current 400 IDSS 500 600 (µA) Ciss – VDS Input capacitance Ciss (pF) 10 5 3 1 VGS=0V f=1kHz Common Source Ta = 25°C 1 10 5 Drain - Source voltage VDS (V) 5 2007-11-01 2SK3376TV RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01