BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package 2 1 Type Marking Ordering Code Pin Configuration BC 856S 3Ds 1/4=E1/E2 Q62702-C2532 2/5=B1/B2 3 VPS05604 Package 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 65 Collector-base voltage VCBO 80 Collector-emitter voltage VCES 80 Emitter-base voltage VEBO 5 DC collector current IC 100 Peak collector current I CM 200 Total power dissipation, T S = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature T stg Value Unit V mA - 65...+150 Thermal Resistance Junction ambient 1) RthJA ≤275 Junction - soldering point RthJS ≤140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Ma 1998-11-01 -12-1998 BC 856S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 65 - - V(BR)CBO 80 - - Collector-emitter breakdown voltage V(BR)CES 80 - - I C = 10 µA, VBE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - I E = 10 µA, I C = 0 Collector cutoff current I CBO - - 15 nA I CBO - - 5 µA DC Characteristics per Transistor Collector-emitter breakdown voltage V I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 VCB = 30 V, I E = 0 Collector cutoff current VCB = 30 V, I E = 0 , TA = 150 °C hFE DC current gain 1) I C = 10 µA, VCE = 5 V I C = 2 mA, V CE = 5 V - 250 - 200 290 475 VCEsat Collector-emitter saturation voltage1) mV I C = 10 mA, I B = 0.5 mA - 90 300 I C = 100 mA, IB = 5 mA - 250 650 I C = 10 mA, I B = 0.5 mA - 700 - I C = 100 mA, IB = 5 mA - 850 - I C = 2 mA, V CE = 5 V 600 650 750 I C = 10 mA, VCE = 5 V - - 820 VBEsat Base-emitter saturation voltage 1) VBE(ON) Base-emitter voltage 1) 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Ma 1998-11-01 -12-1998 BC 856S Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. fT - 250 - MHz Ccb - 3 - pF Ceb - 8 - h11e - 4.5 - kΩ h12e - 2 - 10 -4 h21e - 330 - - h22e - 30 - µS AC Characteristics per Transistor Transition frequency I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit output admittance I C = 2 mA, V CE = 5 V, f = 1 kHz Semiconductor Group Semiconductor Group 33 Ma 1998-11-01 -12-1998 BC 856S Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy 300 mW Ptot TS 200 TA 150 100 50 0 0 20 40 60 80 120 °C 100 Kein 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 44 Ma 1998-11-01 -12-1998 BC 856S Transition frequency f T = f (I C) Collector-base capacität CCB = f (VCBO) VCE = 5V Emitter-base capacität CEB = f (VEBO) EHP00378 10 3 C CB0 ( C EB0 ) MHz fT 5 12 pF BC 856...860 EHP00376 10 8 10 2 C EBO 6 5 4 C CBO 2 10 1 10 -1 5 10 0 5 10 1 mA 0 10 -1 10 2 10 0 5 ΙC V VCB0 Collector cutoff current I CBO = f (T A) Collector-emitter saturation voltage VCB = 30V IC = f (VCEsat), h FE = 20 EHP00381 10 4 nA EHP00380 10 2 ΙC Ι CB0 mA 10 3 100 C 25 C -50 C 5 10 10 1 max 2 5 5 typ 10 1 5 10 10 1 (VEB0 ) 10 0 5 0 5 10 -1 0 50 100 C 10 -1 150 TA Semiconductor Group Semiconductor Group 55 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Ma 1998-11-01 -12-1998 BC 856S DC current gain h FE = f (I C) Base-emitter saturation voltage VCE = 5V IC = f (VBEsat), hFE = 20 EHP00382 10 3 EHP00379 10 2 mA h FE 5 ΙC 100 C 100 C 25 C -50C 25 C 10 2 -50 C 10 1 5 5 10 1 10 0 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 10 -1 mA 10 2 ΙC Semiconductor Group Semiconductor Group 66 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat Ma 1998-11-01 -12-1998