ROHM RFN5B2S

Data Sheet
Super Fast Recovery Diode
RFN5B2S
Dimensions (Unit : mm)
Applications
General rectification
Land size figure (Unit : mm)
6.0
2.3±0.2
0.1
6.5±0.2
6.0
0.5±0.1
C0.5
9.5±0.5
0.75
（1）
0.9
（2） （3）
2.3±0.2
0.65±0.1
CPD
2.5
0.8 min
①
Construction
Silicon epitaxial planer
1.6
1.6
5.5±0.3
0.1
Features
1)Power mold type. (CPD)
2)Low switching loss
3)High current overload capacity
0.5±0.1
2.3±0.2
3.0 2.0
1.5±0.3
5.1±0.2
0.1
2.3 2.3
Structure
1.0±0.2
ROHM : CPD
JEITA : SC-63
①
Manufacture Date
Taping dimensions (Unit : mm)
2.0±0.05
φ1.55±0.1
0
8.0±0.1
0.4±0.1
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
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© 2011 ROHM Co., Ltd. All rights reserved.
Conditions
Duty≤0.5
Direct voltage
Tc=82°C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
60Hz half sin wave,resistive load
Conditions
IF=5A
VR=200V
IF=0.5A,IR=1A,Irr=0.25×I R
junction to lead
1/4
Min.
－
－
－
－
10.1±0.1
10.1±0.1
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
VRM
Repetitive peak Reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
φ3.0±0.1
8.0±0.1
0～0.5
6.8±0.1
13.5±0.2
TL
16.0±0.2
7.5±0.05
2.5±0.1
4.0±0.1
2.7±0.2
Limits
200
200
5
Unit
V
V
A
40
A
150
55 to 150
C
C
Typ.
0.90
0.01
13
－
Max.
0.98
10
25
12
Unit
V
μA
ns
°C/W
2011.12 - Rev.A
Data Sheet
RFN5B2S
10000
100
1
1000
Tj=125°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Tj=150°C
Tj=150°C
10
Tj=25°C
0.1
Tj=75°C
0.01
Tj=125°C
100
Tj=75°C
10
1
Tj=25°C
0.001
0.1
0
200
400
600
800 1000 1200 1400 1600 1800
0
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
50
100
FORWARD VOLTAGE:VF(mV)
f=1MHz
Tj=25°C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
200
1000
1000
100
10
Tj=25°C
IF=5A
n=20pcs
900
AVE:895.5mV
800
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
150
Tj=25°C
VR=200V
n=20pcs
10
AVE:13.25nA
Ta=25°C
f=1MHz
VR=0V
n=10pcs
140
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
150
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
130
AVE:135.2pF
120
110
1
100
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.12 - Rev.A
Data Sheet
RFN5B2S
30
200
Tj=25°C
IF=0.5A
IR=1.0A
Irr=0.25×IR
n=10pcs
REVERSE RECOVERY TIME:trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
180
160
140
AVE:112.5A
120
100
80
60
1cyc
IFSM
40
25
20
15
10
AVE:12.6ns
5
8.3ms
20
0
0
trr DISPERSION MAP
IFSM DISPERSION MAP
1000
1000
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
8.3ms
1cyc.
100
10
time
100
10
1
1
1
10
1
100
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
30
100
No break at 30kV
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
AVE：19.9kV
10
5
0
C=200pF
R=0Ω
Rth(j-c)
1
0
0.001
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
10
3/4
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
2011.12 - Rev.A
Data Sheet
RFN5B2S
10
8
D.C.
D.C.
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
8
6
D=1/2
Sin(θ＝180)
4
2
0A
Io
0V
VR
t
T
D=t/T
VR=100V
Tj=150°C
D=1/2
6
Sin(θ＝180)
4
2
0
0
0
2
4
6
8
0
10
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© 2011 ROHM Co., Ltd. All rights reserved.
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
4/4
2011.12 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A