ZETEX ZHCS350TA

ZHCS350
SOD523 40V LOW VF SCHOTTKY BARRIER DIODE
SUMMARY
VR = 40V; IFAV = 510mA;
VF = 405mV typ @ 100mA; IR = 7µA typ @ 30V
DESCRIPTION
Packaged in the SOD523 package this addition to the
Zetex Schottky diode range offers an ideal low VF/IR
performance combined with a low package height of
0.9mm making the device suitable for various
converter, charger, and LED driver circuits.
FEATURES
SOD523
• Vr = 40V
• Low VF
• 350mA continuous current rating
• Low profile SOD523 package (0.9mm)
• 100% matte tin plated external leads
APPLICATIONS
• DC - DC converters
• Mobile telecomms
• Charger circuits
• LED driver circuits
• MOSFET voltage protection circuits
• High frequency rectification
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
ZHCS350TA
7”
8mm embossed
3,000 units
ZHCS350TC
13”
8mm embossed
10,000 units
Prior to May 2005 (Pb free conversion date) a prefix ‘u’
will be applied to the part numberto denote Pb free for
ordering purposes only.
TOP VIEW
DEVICE MARKING
• 35
ISSUE 1 - AUGUST 2004
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ZHCS350
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Continuous Reverse Voltage
VR
40
V
Continuous Forward Current
IF
350
mA
Average Peak Forward Current; D.C. = 50%
I FAV
510
mA
Non Repetitve Forward Current t < 100µS
I FSM
< 10mS
4.2
A
910
mA
Power Dissipation at TA=25°C (a)
PD
285
mW
(b)
PD
330
mW
-55 to +150
°C
125
°C
VALUE
UNIT
Power Dissipation at TA=25°C
Storage Temperature Range
Tstg
Junction Temperature
Tj
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
(a)
R ⍜JA
350
°C/W
Junction to Ambient
(b)
R ⍜JA
303
°C/W
NOTES
(a) For a single device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of 1oz copper in still air conditions.
(b) As (a) above measured at t<5 secs.
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ZHCS350
CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
Reverse Breakdown Voltage
V (BR)R
Forward Voltage
VF
MIN.
40
TYP.
MAX. UNIT CONDITIONS
V
I R =100␮A
300
60
325
mV
I F =30mA*
335
370
mV
I F =50mA*
405
460
mV
I F =100mA*
730
810
mV
I F = 350mA*
Reverse Current
IR
7
12
␮A
V R =30V
Diode Capacitance
CD
3.3
6
pF
f=1MHz; V R =25V
Reverse Recovery Time
t rr
1.6
nS
Switched from
I F =100mA to I R =100mA
Measured at I R =10mA
NOTES
* Measured under pulsed conditions. Pulse width=300␮S. Duty cycle ⱕ%
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ZHCS350
TYPICAL CHARACTERISTICS
ISSUE 1 - AUGUST 2004
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ZHCS350
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
–
0.800
–
0.0314
E
1.500
1.700
0.0590
0.0669
A1
0.000
0.100
0.000
0.0039
E1
1.100
1.300
0.0433
0.0511
A2
0.600
0.800
0.0236
0.0314
L
0.200
0.400
0.0078
0.0157
b1
0.160
0.300
0.0062
0.0118
L1
0.170
0.230
0.0066
0.0090
⍜1⬚
4
10
4⬚
10⬚
c
0.080
0.220
0.0031
0.0086
D
0.700
0.900
0.0275
0.0354
© Zetex Semiconductors plc 2004
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Telephone (44) 161 622 4444
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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ISSUE 1 - AUGUST 2004
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